1200V 40A Trench Field Stop IGBT SPTECH IKW40N120T2 with tight parameter distribution and ruggedness
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Product Description
Product Overview
The IKW40N120T2 is a 1200V / 40A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology for very tight parameter distribution, high ruggedness, and stable temperature behavior. Key advantages include a short circuit withstand time of 10s, low VCE(SAT), and easy parallel switching capability due to a positive temperature coefficient in VCE(SAT). It also offers enhanced avalanche capability.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Maximum Ratings | ||||
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | - |
| DC collector current, limited by Tjmax | IC | 80 / 40 | A | TC = 25C / 100C |
| Diode Forward current, limited by Tjmax | IF | 80 / 40 | A | TC = 25C / 100C |
| Pulsed Collector Current, limited by Tjmax | ICpuls | 160 | A | - |
| Turn off safe operating area | - | -160 | A | VCE 1200V, Tj 150C |
| Diode Pulsed Current, limited by Tjmax | IFpuls | 160 | A | - |
| Short Circuit Withstand Time | Tsc | 10 | s | VGE= 15V, VCE 600V |
| Power dissipation , Tj=25 | Ptot | 416 | W | - |
| Operating junction temperature | Tj | -40...+150 | C | - |
| Storage temperature | Ts | -55...+150 | C | - |
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | - | 260 | C | - |
| Thermal Resistance | ||||
| IGBT thermal resistance, junction - case | R(j-c) | 0.3 | K/W | - |
| Diode thermal resistance, junction - case | R(j-c) | 0.6 | K/W | - |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | - |
| Electrical Characteristics of the IGBT (Tj= 25 unless otherwise specified) | ||||
| Static Collector-Emitter breakdown voltage | BVCES | 1200 / 1300 | V | VGE=0V , IC=250A |
| Gate threshold voltage | VGE(th) | 5.1 / 5.8 / 6.4 | V | VGE=VCE, IC=250A |
| Collector-Emitter Saturation voltage | VCE(sat) | 1.7 / 2.1 | V | VGE=15V, IC=40A, Tj = 25C / 150C |
| Zero gate voltage collector current | ICES | 10 / 2500 | A | VCE = 1200V, VGE = 0V, Tj = 25C / 150C |
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 15 | S | VCE=20V, IC=15A |
| Dynamic Characteristics of the IGBT | ||||
| Input capacitance | Cies | 4400 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 180 | pF | - |
| Reverse transfer capacitance | Cres | 100 | pF | - |
| Gate charge | QG | 270 | nC | VCC = 960V, IC = 40A, VGE = 15V |
| Short circuit collector current | ICSC | 240 | A | VGE=15V,tSC10us, VCC=600V, Tjstart=25C |
| Switching Characteristic, Inductive Load (at Tj = 25C) | ||||
| Turn-on delay time | td(on) | 55 | ns | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12 |
| Rise time | tr | 20 | ns | - |
| Turn-on energy | Eon | 2.4 | mJ | - |
| Turn-off delay time | td(off) | 230 | ns | - |
| Fall time | tf | 160 | ns | - |
| Turn-off energy | Eoff | 1.5 | mJ | - |
| Electrical Characteristics of the DIODE (Tj= 25 unless otherwise specified) | ||||
| Diode Forward Voltage | VFM | 3.5 | V | IF = 40A |
| Reverse Recovery Time | Trr | 190 | ns | IF= 40A, VR = 600V, di/dt= 400A/s |
| Reverse Recovery Current | Irr | 6 | A | - |
| Reverse Recovery Charge | Qrr | 530 | nC | - |
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