Switching and AF amplifier PNP transistor Slkor BC857CW plastic encapsulated in compact SOT323 package

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

These PNP plastic-encapsulated transistors are ideally suited for automatic insertion and are designed for switching and AF amplifier applications. They offer reliable performance in various electronic circuits.

Product Attributes

Type: PNP Transistor
Encapsulation: Plastic
Package: SOT-323
Brand: SLKORMICRO (implied by website reference)

Technical Specifications

Model	Parameter	Symbol	Test Conditions	Min	Max	Unit
BC856W	Collector-Base Voltage	VCBO	IC= -10A, IE=0	-80		V
	Collector-Emitter Voltage	VCEO	IC= -10mA, IB=0	-65		V
	Collector Current Continuous	IC	(Ta=25 unless otherwise noted)		-0.1	A
BC857W	Collector-Base Voltage	VCBO	IC= -10A, IE=0	-50		V
	Collector-Emitter Voltage	VCEO	IC= -10mA, IB=0	-45		V
	Collector Current Continuous	IC	(Ta=25 unless otherwise noted)		-0.1	A
BC858W	Collector-Base Voltage	VCBO	IC= -10A, IE=0	-30		V
	Collector-Emitter Voltage	VCEO	IC= -10mA, IB=0	-30		V
	Collector Current Continuous	IC	(Ta=25 unless otherwise noted)		-0.1	A
Emitter-Base Voltage			VEBO	IE= -1A, IC=0		-5	V
Collector Power Dissipation			PC*	(Ta=25 unless otherwise noted)		150	mW
Junction Temperature			TJ			150
Storage Temperature			Tstg		-65	150
BC856AW, 857AW, 858AW	DC Current Gain	hFE	VCE= -5V, IC= -2mA	125
				220
				420
BC856BW, 857BW, 858BW	DC Current Gain	hFE	VCE= -5V, IC= -2mA	250
				475
				800
BC857CW, BC858CW	DC Current Gain	hFE	VCE= -5V, IC= -2mA		420
BC857CW, BC858CW	DC Current Gain	hFE	VCE= -5V, IC= -2mA		800
Collector-Emitter Saturation Voltage			VCE(sat)	IC=-100mA, IB= -5mA		-0.65	V
Base-Emitter Saturation Voltage			VBE(sat)	IC= -100mA, IB= -5mA		-1.1	V
Transition Frequency			fT	VCE= -5V, IC= -10mA, f=100MHz		100	MHz
Collector Capacitance			Cob	VCB=-10V, f=1MHz		4.5	pF