1200V 25A Trench Field Stop IGBT SPTECH SPT25N120U1 with Low VCEsat and Short Circuit Withstand Time
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Product Description
Product Overview
The SPT25N120U1 is a 1200V / 25A Trench Field Stop IGBT designed for high reliability and performance. It features Trench-Stop Technology for high-speed switching, enhanced ruggedness, and a short circuit withstand time of 10s. Its low VCEsat and easy parallel switching capability make it suitable for demanding applications.
Product Attributes
- Brand: Superic
- Product Series: Trench Field Stop IGBT
- Model: SPT25N120U1
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | |||
| DC collector current, limited by Tjmax | IC | TC = 25C | 50 | A | ||
| DC collector current, limited by Tjmax | IC | TC = 100C | 25 | A | ||
| Diode Forward current, limited by Tjmax | IF | TC = 25C | 50 | A | ||
| Diode Forward current, limited by Tjmax | IF | TC = 100C | 25 | A | ||
| Continuous Gate-emitter voltage | VGE | 20 | V | |||
| Transient Gate-emitter voltage | VGE | 30 | V | |||
| Pulsed collector current, VGE= 15V , tp limited by Tjmax | ICM | 75 | A | |||
| Short Circuit Withstand Time, VGE= 15V, VCE 600V | Tsc | 10 | s | |||
| Power dissipation , Tj=25 | Ptot | 210 | W | |||
| Operating junction temperature | Tj | -40 | 150 | C | ||
| Storage temperature | Ts | -55 | 150 | C | ||
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | 260 | C | ||||
| Thermal Resistance | ||||||
| IGBT thermal resistance, junction - case | R(j-c) | 0.61 | K/W | |||
| Diode thermal resistance, junction - case | R(j-c) | 1.2 | K/W | |||
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |||
| Electrical Characteristics of the IGBTTj= 25 unless otherwise specified | ||||||
| Static Collector-Emitter breakdown voltage | BVCES | VGE=0V , IC=250A | 1200 | V | ||
| Gate threshold voltage | VGE(th) | VGE=VCE, IC=250A | 5.4 | 6.0 | 6.6 | V |
| Collector-Emitter Saturation voltage | VCE(sat) | VGE=15V, IC=25A Tj = 25C | 2.05 | V | ||
| VGE=15V, IC=25A Tj = 150C | 2.45 | V | ||||
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V Tj = 25C | 100 | A | ||
| VCE = 1200V, VGE = 0V Tj = 150C | 1000 | A | ||||
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA | ||
| Transconductance | gfs | VCE=20V, IC=25A | 13 | S | ||
| Dynamic Electrical Characteristics | ||||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 1865 | pF | ||
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 70 | pF | ||
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 45 | pF | ||
| Gate charge | QG | VCC = 960V, IC = 25A, VGE = 15V | 137 | nC | ||
| Short circuit collector current | ICSC | VGE=15V,tSC10us VCC=600V, Tjstart=25C | 140 | A | ||
| Switching Characteristic, Inductive Load | ||||||
| Turn-on delay time | td(on) | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=42 | 62 | ns | ||
| Rise time | tr | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=42 | 22 | ns | ||
| Turn-on energy | Eon | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=42 | 3.3 | mJ | ||
| Turn-off delay time | td(off) | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=42 | 297 | ns | ||
| Fall time | tf | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=42 | 94 | ns | ||
| Turn-off energy | Eoff | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=42 | 0.65 | mJ | ||
| Electrical Characteristics of the DIODE | ||||||
| Diode Forward Voltage | VFM | IF = 25A | 3.1 | V | ||
| Reverse Recovery Time | Trr | IF= 25A, di/dt= 600A/s | 420 | nS | ||
| Reverse Recovery Current | Irr | IF= 25A, di/dt= 600A/s | 17 | A | ||
| Reverse Recovery Charge | Qrr | IF= 25A, di/dt= 600A/s | 2570 | nC | ||
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