Compact and PNP Transistor Slkor MMBTA56 Featuring SOT23 Package for Amplifier Circuit Applications

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Product Description

Product Overview

The MMBTA56 is a PNP type transistor encapsulated in a SOT-23 plastic package. It is designed for general-purpose amplifier applications and serves as a complementary type to the MMBTA06 NPN transistor. This component offers reliable performance with well-defined electrical characteristics and maximum ratings suitable for various electronic circuits.

Product Attributes

Type: PNP Transistor
Package: SOT-23 Plastic-Encapsulate
Marking: MMBTA56
Complimentary Type: MMBTA06 (NPN)

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage	VCBO				-80	V
Collector-Emitter Voltage	VCEO				-80	V
Emitter-Base Voltage	VEBO				-4	V
Collector Current	IC				-500	mA
Collector Power Dissipation	PC				225	mW
Thermal Resistance From Junction To Ambient	RJA			555	/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC= -100A, IE=0	-80			V
Collector-emitter breakdown voltage	V(BR)CEO	IC= -1mA, IB=0	-80			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A, IC=0	-4			V
Collector cut-off current	ICBO	VCB=-80 V , IE=0			-0.1	A
Collector cut-off current	ICEO	VCB=-60V , IE=0			-1	A
Emitter cut-off current	IEBO	VEB= -3V , IC=0			-0.1	A
DC current gain	hFE	VCE=-1V, IC= -10mA	100		400
DC current gain	hFE	VCE=-1V, IC= -100mA	100
Collector-emitter saturation voltage	VCE(sat)	IC=-100 mA, IB= -10mA		-0.25		V
Base-emitter saturation voltage	VBE(sat)	VCE=-1V, IC=-100mA		-1.2		V
Transition frequency	fT	VCE=-1V, IC= -100mA, f=100MHz		50		MHz