NPN Transistor Slkor PBSS304 with 60V Collector Emitter Voltage and 5A Continuous Collector Current

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Product Description

Product Overview

This NPN transistor, model PBSS304, is designed for high-current applications with a BVCEO exceeding 60V and a high continuous collector current of 5A. It features a low equivalent on-resistance (RSAT = 30m) and a low saturation voltage (VCE(SAT)

Product Attributes

Brand: SLKORMICRO (implied by URL)
Material: Molded Plastic ("Green" Molding Compound)
Finish: Lead-Free, RoHS Compliant
Environmental: Halogen and Antimony Free ("Green" Device)
Compliance: PPAP Capable
Package Type: SOT89

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Collector-Base Voltage	VCBO	150	V
Collector-Emitter Voltage	VCEO	60	V
Emitter-Base Voltage	VEBO	7	V
Base Current	IB	2	A
Continuous Collector Current	IC	5	A
Peak Pulse Current	ICM	20	A
Power Dissipation (Note 6)	PD	1.5	W	@TA = +25C
Linear Derating Factor (Note 6)		12	mW/C
Power Dissipation (Note 7)	PD	2.1	W	@TA = +25C
Linear Derating Factor (Note 7)		16.8	mW/C
Thermal Resistance, Junction to Ambient (Note 6)	RJA	83	C/W
Thermal Resistance, Junction to Ambient (Note 7)	RJA	60	C/W
Thermal Resistance, Junction to Leads (Note 8)	RJL	3.23	C/W
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C
Collector-Base Breakdown Voltage	BVCBO	150 (Typ 190)	V	IC = 100A
Collector-Emitter Breakdown Voltage (Note 10)	BVCER	150 (Typ 190)	V	IC = 1A, RB 1k
Collector-Emitter Breakdown Voltage (Note 10)	BVCEO	60 (Typ 80)	V	IC = 10mA
Emitter-Base Breakdown Voltage	BVEBO	7 (Typ 8.1)	V	IE = 100A
Collector Cutoff Current	ICBO	< 1 (Max 500)	nA	VCB = 120V, TA = +25C
Collector Cutoff Current	ICBO	< 1 (Max 500)	nA	VCB = 120V, TA = +100C
Collector Cutoff Current	ICER	< 1 (Max 100)	nA	R 1k, VCB = 120V, TA = +25C
Collector Cutoff Current	ICER	< 1 (Max 100)	nA	R 1k, VCB = 120V, TA = +100C
Emitter Cutoff Current	IEBO	< 1 (Max 10)	nA	VEB = 6V
DC Current Transfer Ratio (Note 10)	hFE	100-200		IC = 10mA, VCE = 1V
DC Current Transfer Ratio (Note 10)	hFE	100-300		IC = 2A, VCE = 1V
DC Current Transfer Ratio (Note 10)	hFE	55-105		IC = 5A, VCE = 1V
DC Current Transfer Ratio (Note 10)	hFE	20-40		IC = 10A, VCE = 1V
Collector-Emitter Saturation Voltage (Note 10)	VCE(SAT)	17-30	mV	IC = 100mA, IB = 5mA
Collector-Emitter Saturation Voltage (Note 10)	VCE(SAT)	35-55	mV	IC = 1A, IB = 100mA
Collector-Emitter Saturation Voltage (Note 10)	VCE(SAT)	40-65	mV	IC = 1A, IB = 50mA
Collector-Emitter Saturation Voltage (Note 10)	VCE(SAT)	90-125	mV	IC = 2A, IB = 50mA
Collector-Emitter Saturation Voltage (Note 10)	VCE(SAT)	170-230	mV	IC = 6A, IB = 300mA
Base-Emitter Saturation Voltage (Note 10)	VBE(SAT)	970-1100	mV	IC = 6A, IB = 300mA
Base-Emitter Turn-on Voltage (Note 10)	VBE(ON)	910-1050	mV	IC = 6A, VCE = 1V
Transitional Frequency	fT	130	MHz	IC = 100mA, VCE = 10V, f = 50MHz
Output Capacitance	COBO	31	pF	VCB = 10V, f = 1MHz
Switching Time (Turn-on)	tON	42	ns	VCC = 10V, IC = 1A, IB1 = -IB2 = 100mA
Switching Time (Turn-off)	tOFF	760	ns	VCC = 10V, IC = 1A, IB1 = -IB2 = 100mA
Weight		0.05 (Approximate)	grams