High voltage IGBT SPTECH SPT40N120F1C offering performance in solar inverters and welding equipment
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Product Description
Product Overview
The SPT40N120F1C is a high-performance IGBT with Trench-Stop Technology, offering exceptional reliability and efficiency. It features a high breakdown voltage of 1200V, high-speed switching, and excellent ruggedness. Its positive temperature coefficient in VCEsat ensures easy parallel switching, and it boasts enhanced avalanche capability. This product is ideal for demanding applications such as Uninterruptible Power Supplies, Solar Inverters, Welding, and PFC applications.
Product Attributes
- Brand: SPTECH
- Product Package: SPT40N120F1C TO247 Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | |
| DC collector current | IC | 80 / 40 | A | TC = 25C / TC = 100C |
| Diode Forward current | IF | 80 / 40 | A | TC = 25C / TC = 100C |
| Continuous Gate-emitter voltage | VGE | ±20 | V | |
| Transient Gate-emitter voltage | VGE | ±30 | V | |
| Pulsed Collector Current | ICM | 160 | A | VGE =15V, tp limited by Tjmax |
| Diode Pulsed Current | IFpuls | 160 | A | tp limited by Tjmax |
| Short Circuit Withstand Time | Tsc | 10 | μs | VGE= 15V, VCE≤ 600V |
| Power dissipation | Ptot | 417 | W | Tj=25°C |
| Operating junction temperature | Tj | -40...+150 | °C | |
| Storage temperature | Ts | -55...+150 | °C | |
| IGBT thermal resistance, junction - case | Rθ(j-c) | 0.3 | K/W | |
| Diode thermal resistance, junction - case | Rθ(j-c) | 0.7 | K/W | |
| Thermal resistance, junction - ambient | Rθ(j-a) | 40 | K/W | |
| Static Collector-Emitter breakdown voltage | BVCES | 1200 / 1300 | V | VGE=0V , IC=250μA |
| Gate threshold voltage | VGE(th) | 5.1 / 5.8 / 6.4 | V | VGE=VCE, IC=250μA |
| Collector-Emitter Saturation voltage | VCE(sat) | 2.0 / 2.5 | V | VGE=15V, IC=40A, Tj = 25°C / Tj = 150°C |
| Zero gate voltage collector current | ICES | 10 / 2500 | μA | VCE = 1200V, VGE = 0V, Tj = 25°C / Tj = 150°C |
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = ± 20V |
| Transconductance | gfs | 15 | S | VCE=20V, IC=15A |
| Input capacitance | Cies | 4400 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 180 | pF | |
| Reverse transfer capacitance | Cres | 100 | pF | |
| Gate charge | QG | 270 | nC | VCC = 960V, IC = 40A, VGE = 15V |
| Short circuit collector current | ICSC | 240 | A | VGE=15V,tSC≤10us, VCC=600V, Tjstart=25°C |
| Turn-on delay time | td(on) | 60 | ns | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12Ω, Tj = 25°C |
| Rise time | tr | 27 | ns | |
| Turn-on energy | Eon | 2.9 | mJ | |
| Turn-off delay time | td(off) | 230 | ns | |
| Fall time | tf | 70 | ns | |
| Turn-off energy | Eoff | 0.8 | mJ | |
| Diode Forward Voltage | VFM | 2.6 | V | IF = 40A |
| Reverse Recovery Time | Trr | 250 | ns | IF= 40A, VR = 600V, di/dt= 400A/μs |
| Reverse Recovery Current | Irr | 15 | A | |
| Reverse Recovery Charge | Qrr | 600 | nC |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina