Silicon transistor Slkor 13001 featuring 400 volt collector emitter voltage and compact SOT23 package design

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Product Description

Product Overview

This product is a general-purpose NPN silicon transistor designed for various electronic applications. It features a high collector-emitter voltage (VCEO) of 400V and a continuous collector current (Ic) of 0.2A, with a power dissipation (PC) of 750mW. The transistor is housed in an SOT-23 package, making it suitable for compact designs.

Product Attributes

Brand: SLKOR
Model Number: 13001
Material: Silicon
Package Type: SOT-23

Technical Specifications

Parameter	Symbol	Limit/Test Conditions	Unit
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage	VCBO	600	V
Collector-Emitter Voltage	VCEO	400	V
Emitter-Base Voltage	VEBO	7	V
Collector Current - Continuous	IC	0.2	A
Power Dissipation	PC	0.75	W
Junction Temperature	TJ	150
Storage Temperature	TSTG	-55+150
Electrical Characteristics (TJ=25 unless otherwise noted)
Collector-Base Breakdown Voltage	VCBO	Ic=0.1mA, IE=0	600 V
Collector-Emitter Breakdown Voltage	VCEO	Ic=1mA, IB=0	400 V
Emitter-Base Breakdown Voltage	VEBO	IE=0.1mA, IC=0	7 V
Base-Emitter Voltage	VBE	IE=100mA	1.1 V
Collector Cut-off Current	ICBO	VCB=600V, IE=0	100 A
Collector Cut-off Current	ICEO	VCE=400V, IB=0	100 A
Emitter Cut-off Current	IEBO	VEB=7V, IC=0	100 A
Collector-Emitter Saturation Voltage	VCE(sat)	IC=100mA, IB=20mA	0.5 V
Base-Emitter Saturation Voltage	VBE(sat)	IC=100mA, IB=20mA	1.2 V
DC Current Gain	hFE(1)	VCE=20V, IC=20mA	10 - 70
DC Current Gain	hFE(2)	VCE=10V, IC=0.25mA	5 -
Storage Time	ts	IC=50mA, IB1=-IB2=5mA, VCC=45V	1.5 s
Fall Time	tf	IC=50mA, IB1=-IB2=5mA, VCC=45V	0.3 s
Transition Frequency	fT	VCE=20V, IC=20mA, f=1MHz	8 MHz