Silkor 2N3906 General Purpose PNP Silicon Transistor TO92 Package Ideal for Low Current Applications

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Product Description

Product Overview

This is a Silicon PNP transistor housed in a TO-92 plastic package. It is designed for general-purpose amplification applications requiring low current and low voltage.

Product Attributes

Package Type: TO-92 Plastic Package
Transistor Type: PNP Silicon

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=-10A, IE=0			-40	V
Collector to Emitter Breakdown Voltage	VCEO	IC=-1.0mA, IB=0			-40	V
Emitter to Base Breakdown Voltage	VEBO	IE=-10A, IC=0			-5.0	V
Collector Cut-Off Current	ICBO	VCB=-40V, IE=0			-0.1	A
Emitter Cut-Off Current	IEBO	VEB=-5.0V, IC=0			-0.1	A
DC Current Gain (hFE(1))	hFE(1)	VCE=-1.0V, IC=-10mA	100		300
DC Current Gain (hFE(2))	hFE(2)	VCE=-1.0V, IC=-100mA		27
Collector to Emitter Saturation Voltage	VCE(sat)	IC=-50mA, IB=-5.0mA			-0.4	V
Base to Emitter Saturation Voltage	VBE(sat)	IC=-50mA, IB=-5.0mA			-0.95	V
Current Gain Bandwidth Product	fT	IC=-10mA, VCE=-20V		250		MHz
Output Capacitance	Cob	VCB=-5.0V, IE=0, f=100KHz			4.5	pF
Turn On Time	Ton	VCC=-3.0V, IC=-10mA, VBE=-0.5V, IB1=-1.0mA		0.07		s
Turn Off Time	Toff	VCC=-3.0V, IC=-10mA, IB1=-IB2=-1.0mA		0.3		s

Absolute Maximum Ratings (Ta=25)	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	-40	V
Collector to Emitter Voltage	VCEO	-40	V
Emitter to Base Voltage	VEBO	-5.0	V
Collector Current - Continuous	IC	-200	mA
Collector Power Dissipation	PC	625	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Pin Configuration

PIN 1: Collector
PIN 2: Base
PIN 3: Emitter

hFE Classifications & Marking

hFE(1) Classification: 100~300
Marking: Refer to the provided examples. Specific content is subject to print.
Example Marking: 2N 3 906 H 331