power management using Siliup SP40N03BTQ 40V N Channel MOSFET with low gate charge and fast switching
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP40N03BTQ is a 40V N-Channel MOSFET designed by Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) for efficient power management. This MOSFET is suitable for power switching applications, DC-DC converters, and power management systems. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: 40N03B
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 40 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 3.5 | m | ||
| RDS(on)TYP | RDS(on) | @4.5V | 5.5 | m | ||
| ID | ID | 130 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 130 | A | |||
| Continuous Drain Current (Tc=100) | ID | 87 | A | |||
| Pulsed Drain Current | IDM | 520 | A | |||
| Single Pulse Avalanche Energy | EAS | 400 | mJ | |||
| Power Dissipation (Tc=25) | PD | 125 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.0 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 3.5 | 5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=10A | - | 5.5 | 8 | m |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 5400 | - | pF |
| Output Capacitance | Coss | - | 970 | - | ||
| Reverse Transfer Capacitance | Crss | - | 380 | - | ||
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=20A | - | 75 | - | nC |
| Gate-Source Charge | Qgs | - | 10.5 | - | ||
| Gate-Drain Charge | Qg d | - | 17 | - | ||
| Turn-On Delay Time | td(on) | VDD=20V VGS=10V , RG=3, ID=2A | - | 15 | - | nS |
| Rise Time | tr | - | 18 | - | ||
| Turn-Off Delay Time | td(off) | - | 52 | - | ||
| Fall Time | tf | - | 23 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 130 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 23 | - | nS |
| Reverse Recovery Charge | Qrr | - | 12 | - | nC | |
| TO-220-3L Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 | |
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