Switching and Amplification Transistor Slkor FMMT591 PNP Silicon Epitaxial Planar Type for Electronics

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Price: Negotiable

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Product Description

Product Overview

The FMMT591 is a PNP Silicon Epitaxial Planar Transistor designed with low equivalent on-resistance. It is complementary to the FMMT491. This transistor is suitable for various applications requiring efficient signal amplification and switching.

Product Attributes

Brand: SLKORMicro (implied by website URL)
Type: PNP Silicon Epitaxial Planar Transistor
Complementary to: FMMT491

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Absolute Maximum Ratings
Collector Base Voltage	-VCBO	80	V	at 25 ambient temperature unless otherwise specified
Collector Emitter Voltage	-VCEO	60	V	at 25 ambient temperature unless otherwise specified
Emitter Base Voltage	-VEBO	5	V	at 25 ambient temperature unless otherwise specified
Collector Current	-IC	1	A	at 25 ambient temperature unless otherwise specified
Power Dissipation	PD	500	mW	at 25 ambient temperature unless otherwise specified
Junction Temperature	TJ	150		at 25 ambient temperature unless otherwise specified
Storage Temperature Range	TSTG	-55 to 150		at 25 ambient temperature unless otherwise specified
Peak Pulse Current	-ICM	2	A	at 25 ambient temperature unless otherwise specified
Electrical Characteristics
DC Current Gain	HFE	100 (Min)	-	at -VCE = 5 V, -IC = 1 mA
DC Current Gain	HFE	100 (Typ)	-	at -VCE = 5 V, -IC = 500 mA
DC Current Gain	HFE	300 (Max)	-	at -VCE = 5 V, -IC = 1 A
Collector Base Cutoff Current	-ICBO	100	nA	at -VCB = 60 V
Emitter Base Cutoff Current	-IEBO	100	nA	at -VEB = 5.6 V
Collector Base Breakdown Voltage	-V(BR)CBO	80	V	at -IC = 100 A
Collector Emitter Breakdown Voltage	-V(BR)CEO	60	V	at -IC = 10 mA
Emitter Base Breakdown Voltage	-V(BR)EBO	5	V	at -IE = 100 A
Collector Emitter Saturation Voltage	-VCE(sat)	300	mV	at -IC = 500 mA, -IB = 50 mA
Collector Emitter Saturation Voltage	-VCE(sat)	-	mV	at -IC =1 A, -IB = 100 mA
Base Emitter Saturation Voltage	-VBE(sat)	1.2	V	at -IC = 1 A, -IB = 100 mA
Base Emitter Voltage	-VBE(on)	1	V	at -VCE = 5 V, -IC = 1 A
Transition Frequency	FT	150	MHz	at -VCE = 10 V, -IC = 50 mA, f= 100MHz
Collector Output Capacitance	Cob	10	pF	at -VCB = 10 V, f= 1MHz
Note1: Measured under pulsed condition, Pulse width 300uS, Duty cycle 2%.
Package Outline (SOT-23) Dimensions
Symbol	Min.	Typ.	Max.	Unit
A	0.900	1.025	1.150	mm
A1	0.000	0.050	0.100	mm
b	0.300	0.400	0.500	mm
c	0.080	0.115	0.150	mm
D	2.800	2.900	3.000	mm
E	1.200	1.300	1.400	mm
HE	2.250	2.400	2.550	mm
e	1.800	1.900	2.000	mm
L1	0.550	REF	-	mm
L	0.300	0.500	-	mm
	0	8	-	-
Ordering Information
Device	Package	Reel Dimension (inch)	Shipping	-
FMMT591	SOT-23	7	3,000	-