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PNP Power Transistor Silkor 2SB1261 Featuring Low Collector Saturation Voltage and High Power Dissipation

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

Silicon PNP Power Transistors designed for audio amplifier and switching applications, particularly in hybrid integrated circuits. These transistors offer a low collector saturation voltage and high power dissipation capability of up to 10W (Max) at TC=25. They are engineered for robust device performance and reliable operation with minimum lot-to-lot variations.

Product Attributes

  • Brand: SLKORMicro (implied by website domain)
  • Type: PNP Power Transistor

Technical Specifications

Symbol Parameter Conditions Min Typ. Max Unit
ABSOLUTE MAXIMUM RATINGS (Ta=25)
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -7 V
IC Collector Current-Continuous -3 A
PC Collector Power Dissipation @TC=25 10 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 ~ 150
ELECTRICAL CHARACTERISTICS (Tj=25 unless otherwise specified)
V(BR)CBO Collector-Base Breakdown Voltage IC= -100A ; IE= 0 -60 V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 -60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE= -100A; IC= 0 -7 V
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -0.3 V
VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.2 V
ICBO Collector Cutoff Current VCB= -60V; IE= 0 -10 A
IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -10 A
hFE-1 DC Current Gain IC= -0.2A; VCE= -2V 60
hFE-2 DC Current Gain IC= -0.6A; VCE= -2V 100 400
hFE-3 DC Current Gain IC= -2A; VCE= -2V 50
hFE2 Classifications
M 100 - 200
L 160 - 320
K 200 - 400
Model 2SB1261

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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