P Channel MOSFET Siliup SP2004KT3 Featuring 20V Drain Source Voltage and 2KV Electrostatic Discharge

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Product Description

Product Overview

The SP2004KT3 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This surface mount device offers high power and current handling capabilities, along with ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC converters.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP2004KT3
Technology: P-Channel MOSFET
Package: SOT-323
Marking: 04K

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS		-20			V
Static Drain-Source On-Resistance	RDS(on)	-4.5V		400	550	m
Static Drain-Source On-Resistance	RDS(on)	-2.5V		550	700	m
Continuous Drain Current	ID				-0.7	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS		-20			V
Gate-Source Voltage	VGSS			12		V
Continuous Drain Current	ID				-0.7	A
Pulse Drain Current	IDM	Tested			-2.8	A
Power Dissipation	PD				200	mW
Thermal Resistance Junction-to-Ambient	RJA				625	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250A	-20			V
Drain-Source Leakage Current	IDSS	VDS=-16V , VGS=0V			-1	uA
Gate-Source Leakage Current	IGSS	VGS=12V , VDS=0V			10	uA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=-250A	-0.35	-0.65	-1.00	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-500mA		400	550	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-2.5V , ID=-200mA		550	700	m
Input Capacitance	Ciss	VDS=-16V , VGS=0V , f=1MHz		113		pF
Output Capacitance	Coss			15		pF
Reverse Transfer Capacitance	Crss			9		pF
Total Gate Charge	Qg	VDS=-10V , VGS=-4.5V , ID=-2A		1.9		nC
Gate-Source Charge	Qgs			0.4		nC
Gate-Drain Charge	Qgd			0.31		nC
Turn-On Delay Time	td(on)	VDD=-10V VGS=-4.5V , RG=10 , ID=-200mA		9		nS
Turn-On Rise Time	tr			5.7		nS
Turn-Off Delay Time	td(off)			32.6		nS
Turn-Off Fall Time	tf			20.3		nS
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25			-1.2	V
Package Information (SOT-323)
Symbol	Dimensions In Millimeters	Dimensions In Inches
A	0.900 - 1.100	0.035 - 0.043
A1	0.000 - 0.100	0.000 - 0.004
A2	0.900 - 1.000	0.035 - 0.039
b	0.200 - 0.400	0.008 - 0.016
c	0.080 - 0.150	0.003 - 0.006
D	2.000 - 2.200	0.079 - 0.087
E	1.150 - 1.350	0.045 - 0.053
E1	2.150 - 2.450	0.085 - 0.096
e	0.650 TYP.	0.026 TYP.
e1	1.200 - 1.400	0.047 - 0.055
L	0.525 REF.	0.021 REF.
L1	0.260 - 0.460	0.010 - 0.018
	0 - 8	0 - 8