NPN Silicon transistor Slkor 2SC5824-R designed for switching performance and low frequency amplification applications

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Product Description

Product Overview

The 2SC5824 is an NPN Silicon epitaxial planar transistor designed for high-speed switching applications. It offers low saturation voltage and strong discharge power for inductive and capacitive loads. This transistor complements the 2SA2071 and is suitable for low-frequency amplification and high-speed switching scenarios.

Product Attributes

Brand: SLKORmicro
Model: 2SC5824
Structure: NPN Silicon epitaxial planar transistor
Package: SOT-89

Technical Specifications

Parameter	Symbol	Limit(s)	Unit	Conditions
Collector-base voltage	VCBO	60	V
Collector-emitter voltage	VCEO	60	V
Emitter-base voltage	VEBO	6	V
Collector current	IC	3	A
Collector current (pulsed)	ICP	6	A	Pw=100ms
Power dissipation	PC	500	mW	Each terminal mounted on a recommended land.
Power dissipation	PC	2.0	W	Mounted on a 40x40x0.7(mm) ceramic substrate
Junction temperature	Tj	150	C
Range of storage temperature	Tstg	-55~ +150	C
Collector-base breakdown voltage	BVCBO	60	V	IC=100A
Collector-emitter breakdown voltage	BVCEO	60	V	IC=1mA
Emitter-base breakdown voltage	BVEBO	6	V	IE=100A
Collector cut-off current	ICBO	1.0	A	VCB=40V
Emitter cut-off current	IEBO	1.0	A	VEB=4V
Collector-emitter saturation voltage	VCE(sat)	200 (Typ.)	mV	IC=2A, IB=200mA
Collector-emitter saturation voltage	VCE(sat)	500 (Max.)	mV	IC=2A, IB=200mA
DC current gain	hFE	120-390	-	VCE=2V, IC=100mA
Transition frequency	fT	200 (Typ.)	MHz	VCE=10V, IE=-100mA, f=10MHz
Collector output capacitance	Cob	20 (Typ.)	pF	VCB=10V, IE=0mA, f=1MHz
Turn-on time	Ton	50 (Typ.)	ns	IC=3A, IB1=300mA, IB2=-300mA, VCC=25V
Storage time	Tstg	150 (Typ.)	ns	IC=3A, IB1=300mA, IB2=-300mA, VCC=25V
Fall time	Tf	30 (Typ.)	ns	IC=3A, IB1=300mA, IB2=-300mA, VCC=25V
hFE RANK Q		120-270
hFE RANK R		180-390