60V N Channel MOSFET Siliup 2N7002T with ESD Protection 2KV and Low On Resistance in SOT 523 Package
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Product Description
Product Overview
The 2N7002T is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities in a surface mount package. It features ESD protection up to 2KV and is suitable for applications such as battery switches and DC/DC converters. This device offers a low on-resistance and is available in a SOT-523 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: 2N7002T
- Technology: N-Channel MOSFET
- Package: SOT-523
- Marking: K72
- ESD Protection: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| Static Drain-Source On-Resistance | RDS(on)TYP | @10V | 1.7 | |||
| Continuous Drain Current | ID | 300 | mA | |||
| Static Drain-Source On-Resistance | RDS(on)TYP | @4.5V | 1.8 | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 300 | mA | |||
| Pulse Drain Current | IDM | Tested | 1200 | mA | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =200mA | - | 1.7 | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =200mA | - | 1.8 | 4 | |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 28 | - | pF |
| Output Capacitance | Coss | - | 10 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 5 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=300mA | - | 1.7 | - | nC |
| Gate-Source Charge | Qgs | - | 0.35 | - | ||
| Gate-Drain Charge | Qg d | - | 0.5 | - | ||
| Turn-On Delay Time | td(on) | VDD=30V VGS=10V , RG=25 , ID=300mA | - | 3 | - | nS |
| Turn-On Rise Time | tr | - | 17 | - | ||
| Turn-Off Delay Time | td(off) | - | 10 | - | ||
| Turn-Off Fall Time | tf | - | 21 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-523) | ||||||
| Symbol | Dimensions In Millimeters | Min | Max | |||
| A | 0.700 | 0.900 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.700 | 0.800 | ||||
| b1 | 0.150 | 0.250 | ||||
| b2 | 0.250 | 0.350 | ||||
| C | 0.100 | 0.200 | ||||
| D | 1.500 | 1.700 | ||||
| E | 0.700 | 0.900 | ||||
| E1 | 1.450 | 1.750 | ||||
| e | 0.500 (TYP) | |||||
| e1 | 0.900 | 1.100 | ||||
| L | 0.400 (REF) | |||||
| L1 | 0.260 | 0.460 | ||||
| 0 | 8 | |||||
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