High Current NPN Transistor Slkor 2SC2712-G with Low Noise and Excellent Amplification Characteristics

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Product Description

Product Overview

The 2SC2712 is a NPN transistor designed for high voltage and high current applications, offering excellent hFE linearity and a high DC current gain. It features low noise characteristics, making it suitable for various electronic circuits requiring reliable amplification and switching. Available in multiple hFE classifications (O, Y, G, L), this transistor is packaged in a compact SOT-23 outline.

Product Attributes

Brand: slkormicro
Model Number: 2SC2712
Transistor Type: NPN
Package Type: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings (Ta = 25 unless otherwise noted)
Collector-base voltage	VCBO				60	V
Collector-emitter voltage	VCEO				50	V
Emitter-base voltage	VEBO				5	V
Collector current	IC				150	mA
Base current	IB				30	mA
Collector power dissipation	Pc				150	mW
Junction temperature	Tj				150
Storage temperature	Tstg		-55		125
Electrical Characteristics (Ta = 25)
Collector-base breakdown voltage	VCBO	Ic= 100 A, IE= 0	60			V
Collector-emitter breakdown voltage	VCEO	Ic= 1 mA, IB= 0	50			V
Emitter-base breakdown voltage	VEBO	IE= 100A, IC= 0	5			V
Collector-base cut-off current	ICBO	VCB= 60 V, IE= 0			100	nA
Emitter cut-off current	IEBO	VEB= 5V, IC=0			100	nA
Collector-emitter saturation voltage	VCE(sat)	IC=100 mA, IB=10mA		0.25		V
Base-emitter saturation voltage	VBE(sat)	IC=100 mA, IB=10mA		1.2		V
DC current gain	hFE	VCE=6V, IC=2mA	70		700
Noise figure	NF	VCE = 6 V, IC = 0.1 mA, f = 1KHz,RG=10K		1	10	dB
Collector output capacitance	Cob	VCB=10V, IE=0,f=1MHz		2	3.5	pF
Transition frequency	fT	VCE=10V, IC=1mA		80		MHz
hFE Classification
Type			Range	Marking
2SC2712-O			70-140	LO
2SC2712-Y			120-240	LY
2SC2712-G			200-400	LG
2SC2712-L			350-700	LL
Dimensions (mm)
A	A1	b	c	D	E	e
1.1	0.9	0.48	0.15	3.0	2.8	1.9
0.9		0.38	0.09	2.8	2.5	2.1
HE	Lp	Q	w	v
0.45	0.95	0.1	0.55	0.45
0.15		0.2	0.45	0.1