N Channel 40V MOSFET Featuring Split Gate Trench Technology Siliup SP40N05GNJ for DC DC Converters
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Product Description
Product Overview
The SP40N05GNJ is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co., Ltd. It features fast switching speed, low Gate Charge, and low RDS(on), enabled by advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters, motor control, and portable equipment.
Product Attributes
- Brand: Siliup Semiconductor Technology Co., Ltd.
- Product Code: SP40N05GNJ
- Device Code: 40N05G
- Channel Type: N-Channel
- Technology: Split Gate Trench
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 40 | V | |||
| RDS(on) | RDS(on) | @10V | 5 | m | ||
| RDS(on) | RDS(on) | @4.5V | 8 | m | ||
| ID | ID | 40 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25, unless otherwise noted) | 40 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25C) | 40 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | 27 | A | ||
| Pulse Drain Current | IDM | Tested | 160 | A | ||
| Single pulsed avalanche energy | EAS | 56 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 35 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.57 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | - | 5 | 6.3 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 8 | 10.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 1048 | - | pF |
| Output Capacitance | Coss | - | 187 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 178 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=30A | - | 28 | - | nC |
| Gate-Source Charge | Qgs | - | 4 | - | nC | |
| Gate-Drain Charge | Qgd | - | 6 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=20 VGS=10V , RG=3, ID=30A | - | 6 | - | nS |
| Rise Time | tr | - | 2.5 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 22 | - | nS | |
| Fall Time | tf | - | 3.5 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 40 | A | |
| Reverse recovery time | trr | IS=20A, di/dt=100A/us, TJ=25 | - | 12 | - | nS |
| Reverse recovery charge | Qrr | - | 14 | - | nC | |
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 - 0.850 | 0.026 - 0.033 | ||||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0 - 0.05 | 0 - 0.002 | ||||
| D | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| D1 | 2.300 - 2.600 | 0.091 - 0.102 | ||||
| E | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| E1 | 3.150 - 3.450 | 0.124 - 0.136 | ||||
| E2 | 1.535 - 1.935 | 0.060 - 0.076 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| e | 0.550 - 0.750 | 0.022 - 0.030 | ||||
| L | 0.300 - 0.500 | 0.012 - 0.020 | ||||
| L1 | 0.180 - 0.480 | 0.007 - 0.019 | ||||
| L2 | 0 - 0.100 | 0 - 0.004 | ||||
| L3 | 0 - 0.100 | 0 - 0.004 | ||||
| H | 0.315 - 0.515 | 0.012 - 0.020 | ||||
| 9 - 13 | 9 - 13 | |||||
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