SP010N03AGHTD 100V N Channel Power MOSFET Featuring Split Gate Trench Technology and Fast Switching

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Product Description

Product Overview

The SP010N03AGHTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, it offers fast switching speeds, low gate charge, and low Rdson. This device is ideal for power switching applications, DC-DC converters, and power management systems. It is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP010N03AGHTD
Device Type: N-Channel Power MOSFET
Package: TO-263
Technology: Advanced Split Gate Trench Technology

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Product Summary
Drain-Source Voltage	V(BR)DSS			100		V
Drain-Source ON Resistance	RDS(on)TYP	@10V		2.8		m
Continuous Drain Current	ID			180		A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25, unless otherwise noted)			100	V
Gate-Source Voltage	VGS	(Ta=25, unless otherwise noted)		20		V
Continuous Drain Current	ID	(Tc=25)			180	A
Continuous Drain Current	ID	(Tc=100)			120	A
Pulsed Drain Current	IDM				720	A
Single Pulse Avalanche Energy	EAS				1332	mJ
Power Dissipation	PD	(Tc=25)			210	W
Thermal Resistance Junction-to-Case	RJC			0.60		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	100	-	-	V
Drain Cut-Off Current	IDSS	VDS=80V , VGS=0V , TJ=25	-	-	1	A
Gate Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	0.1	A
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250A	2.0	3.0	4.0	V
Drain-Source ON Resistance	RDS(ON)	VGS = 10V, ID = 30A	-	2.8	3.5	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=50V , VGS=0V , f=1MHz	-	7162	-	pF
Output Capacitance	Coss		-	1067	-	pF
Reverse Transfer Capacitance	Crss		-	35	-	pF
Total Gate Charge	Qg	VDS=50V , VGS=10V , ID=125A	-	105	-	nC
Gate-Source Charge	Qgs		-	47	-	nC
Gate-Drain Charge	Qgd		-	23	-	nC
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=50V, VGS=10V , RG=6, ID=125A	-	26	-	nS
Rise Time	tr		-	75	-	nS
Turn-Off Delay Time	td(off)		-	87	-	nS
Fall Time	tf		-	30	-	nS
Source-Drain Diode Characteristics
Source-Drain Diode Forward Voltage	VSD	IS = 1A, VGS = 0V	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	180	A
Reverse Recovery Time	Trr	IS=20A, di/dt=100A/us, TJ=25	-	75	-	nS
Reverse Recovery Charge	Qrr		-	210	-	nC

TO-263 Package Information
Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	4.470	4.670	0.176	0.184
A1	0.000	0.150	0.000	0.006
B	1.120	1.420	0.044	0.056
b	0.710	0.910	0.028	0.036
b1	1.170	1.370	0.046	0.054
c	0.310	0.530	0.012	0.021
c1	1.170	1.370	0.046	0.054
D	10.010	10.310	0.394	0.406
E	8.500	8.900	0.335	0.350
e	2.540 TYP.		0.100 TYP.
e1	4.980	5.180	0.196	0.204
L	14.940	15.500	0.588	0.610
L1	4.950	5.450	0.195	0.215
L2	2.340	2.740	0.092	0.108
L3	1.300	1.700	0.051	0.067
	0	8	0	8
V	5.600 REF.		0.220 REF.