Compact Slkor 2N7002KDW N Channel MOSFET featuring low RDS ON and high saturation current capability

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Product Description

Product Overview

The 2N7002KDW is an N-Channel MOSFET featuring a high-density cell design for low RDS(ON). This voltage-controlled small signal switch offers high saturation current capability and ESD protection, making it suitable for various applications. Its epoxy meets UL 94 V-0 flammability rating.

Product Attributes

Brand: SLKORMicro (implied by website)
Model: 2N7002KDW
Certifications: UL 94 V-0 flammability rating

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Units
VDS	Drain-source Voltage				60	V
VGS	Gate-source Voltage				±20	V
ID	Drain Current				340	mA
Pd	Total Power Dissipation				150	mW
TJ	Junction Temperature				150	℃
TSTG	Storage Temperature		-55		150	℃
RθJA	Thermal Resistance from Junction to Ambient			820		℃/W
V(BR)Dss	Drain-source Breakdown Voltage	VGS =0V,ID = 250 uA	60			V
VGS(th)	Gate-Threshold Voltage (note 1)	VDS=VGS, ID=1mA	1.0	2.5		V
IGSS	Gate-body Leakage	VDS=0V, VGS =±20V			±10	uA
IdSS	Zero Gate Voltage Drain Current	VDS=48V, VGS=0V			1	uA
Rds(on)	Drain-source On-resistance (note 1)	VGS=4.5V, ID=200mA		5.3		Ω
Rds(on)	Drain-source On-resistance (note 1)	VGS=10V, ID=500mA		5.0		Ω
Vsd	Diode Forward Voltage (note 1)	VGS=0V, IS= 300mA		1.5		V
Qr	Recovered charge	VGS=0V, IS= 300mA VR=25V,dls/dt=-100A/µS		30		nC
Ciss	Input Capacitance	VDS=10V VGS=0V F=1MHz		40		pF
Coss	Output Capacitance			30		pF
Crss	Reverse Transfer Capacitance			10		pF
Td(on)	Turn on delay time	VDD=50V,VGS=10V,RL=250Ω RGS=50Ω ,RGEN=50Ω		10		ns
Td(off)	Turn off delay time			15		ns
trr	Reverse recovery time	VGS=0V, IS=300mA,VR=25V Dls/dt=-100A/µs		30		ns
BVGSO	Gate-Source Breakdown Voltage	IGS=±1mA(Open Drain)		±21.5	±30	V