Electronic Circuits Switching Amplifier Transistor Slkor MMBT3904W NPN Silicon Epitaxial Planar Type

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Product Description

Product Overview

The MMBT3904W is an NPN Silicon Epitaxial Planar Transistor designed for switching and amplifier applications. It offers a range of DC current gain values, breakdown voltages, and saturation voltages suitable for various electronic circuits.

Product Attributes

Brand: SLKOR
Type: NPN Silicon Epitaxial Planar Transistor
Model: MMBT3904W

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	VCBO	60	V
Collector Emitter Voltage	VCEO	40	V
Emitter Base Voltage	VEBO	6	V
Collector Current	IC	200	mA
Total Power Dissipation	Ptot	200	mW
Junction Temperature	Tj	150	C
Storage Temperature Range	Tstg	-55 to +150	C
Characteristics (Ta = 25 C)
DC Current Gain	hFE	40	-	VCE = 1 V, IC = 0.1 mA
		70	300	VCE = 1 V, IC = 1 mA
		100	-	VCE = 1 V, IC = 10 mA
		60	-	VCE = 1 V, IC = 50 mA
		30	-	VCE = 1 V, IC = 100 mA
Collector Emitter Cutoff Current	ICES	-	50 nA	VCE = 30 V
Emitter Base Cutoff Current	IEBO	-	50 nA	VEB = 3 V
Collector Base Breakdown Voltage	V(BR)CBO	60	V	IC = 10 A
Collector Emitter Breakdown Voltage	V(BR)CEO	40	V	IC = 1 mA
Emitter Base Breakdown Voltage	V(BR)EBO	6	V	IE = 10 A
Collector Emitter Saturation Voltage	VCE(sat)	-	0.2 V	IC = 10 mA, IB = 1 mA
Collector Emitter Saturation Voltage	VCE(sat)	-	0.3 V	IC = 50 mA, IB = 5 mA
Base Emitter Saturation Voltage	VBE(sat)	0.65	0.85 V	IC = 10 mA, IB = 1 mA
Base Emitter Saturation Voltage	VBE(sat)	-	0.95 V	IC = 50 mA, IB = 5 mA
Transition Frequency	fT	300	MHz	VCE = 20 V, -IE = 10 mA, f = 100 MHz
Collector Output Capacitance	Cob	-	4 pF	VCB = 10 V, f = 100 KHz
Delay Time	td	-	35 ns	VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA
Rise Time	tr	-	35 ns	VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA
Storage Time	tstg	-	200 ns	VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA
Fall Time	tf	-	50 ns	VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA