Trench Power LV MOSFET Slkor SL1216A P Channel Device Designed for PWM and Load Switching Applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SL1216A is a P-Channel MOSFET featuring Trench Power LV MOSFET technology, designed for high power and current handling capabilities with low gate charge. It is suitable for applications such as PWM, power management, and load switching.
Product Attributes
- Brand: SLKOR Micro
- Model: SL1216A
- Technology: Trench Power LV MOSFET
- Package: DFN2X2-6L
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | |||||
| VDS | -12 | V | |||
| VGS | 12 | V | |||
| TJ | 150 | C | |||
| TSTG | -55 | 150 | C | ||
| IS | Tc=25C | -16 | A | ||
| IDM | Tc=25C | -65 | A | ||
| ID | Tc=25C | -16 | A | ||
| PD | TA=25 | 2.5 | W | ||
| RJA | Junction-to-Ambient | 50 | C/W | ||
| Common Ratings (TC=25C Unless Otherwise Noted) | |||||
| Gate-Source Voltage | |||||
| Drain-Source Breakdown Voltage | VGS=0VID=-250A | -12 | V | ||
| Zero Gate Voltage Drain Current | VDS=-12VVGS=0V | -1 | A | ||
| Gate-Body Leakage Current | VGS=12VVDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VDS=VGSID=-250A | -0.4 | -0.62 | -1.0 | V |
| Static Electrical Characteristics @ TJ = 25C (unless otherwise noted) | |||||
| Drain-Source On-State Resistance | VGS=-4.5VID=-6.7A | 12 | 18 | m | |
| Drain-Source On-State Resistance | VGS=-2.5VID=-6.2A | 17 | 25 | m | |
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | |||||
| Input Capacitance | VDS=-10VVGS=0V f=1MHz | 2100 | pF | ||
| Output Capacitance | VDS=-10VID=-10A VGS=-4.5V | 275 | pF | ||
| Reverse Transfer Capacitance | VDD=-10VID=-10A VGS=-4.5VRG=3 | 235 | pF | ||
| Total Gate Charge | 27 | nC | |||
| Gate Source Charge | 4 | nC | |||
| Gate Drain Charge | 7 | nC | |||
| Turn-on Delay Time | 9.5 | nS | |||
| Turn-on Rise Time | 15 | nS | |||
| Turn-Off Delay Time | 40 | nS | |||
| Turn-Off Fall Time | 35 | nS | |||
| Source- Drain Diode Characteristics | |||||
| Forward on voltage | Tj=25Is=-8A | -1.2 | V | ||
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina