Surface mount 60V MOSFET Siliup SP7284KCTW featuring 2KV ESD protection suitable for power and current handling applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP7284KCTW is a 60V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection of 2KV. It is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP7284KCTW
- Package: SOT-363
- Marking: 75
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Value | P-Channel Conditions | P-Channel Value | Units |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | 60 | -60 | V | ||
| RDS(on) | RDS(on) | VGS=10V, ID=250mA | 1.6 TYP | VGS=-10V, ID=-100mA | 4.2 TYP | |
| VGS=4.5V, ID=250mA | 1.8 TYP | VGS=-4.5V, ID=-100mA | 4.5 TYP | |||
| Continuous Drain Current | ID | 340mA | -130mA | mA | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance | RJA | 833 | /W | |||
| Storage Temperature Range | TSTG | -55 to 150 | ||||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||||
| Gate-Source Voltage | VGS | 20 | V | |||
| Pulsed Drain Current | IDM | N-Channel | 1360mA | P-Channel | -520mA | mA |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60V MIN | VGS=0V, ID=250A | -60V MIN | V |
| Drain-Source Leakage Current | IDSS | VDS=48V, VGS=0V | 1A MAX | VDS=-48V, VGS=0V | -1A MAX | A |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | 10A MAX | VGS=20V, VDS=0V | 10A MAX | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.0 to 2.5V | VDS=VGS, ID=-250A | -1.0 to -2.5V | V |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 28pF TYP | VDS=-5V, VGS=0V, f=1MHz | 30pF TYP | pF |
| Output Capacitance | Coss | 10pF TYP | 10pF TYP | pF | ||
| Reverse Transfer Capacitance | Crss | 5pF TYP | 5pF TYP | pF | ||
| Total Gate Charge | Qg | VDS=10V, VGS=4.5V, ID=300mA | 1.7nC TYP | VDS=-30V, VGS=-10V, ID=-0.15A | 1.8nC TYP | nC |
| Gate-Source Charge | Qgs | 0.35nC TYP | 0.5nC TYP | nC | ||
| Gate-Drain Charge | Qgd | 0.5nC TYP | 0.18nC TYP | nC | ||
| Turn-On Delay Time | td(on) | VDD=30V, VGS=10V, RG=25, ID=300mA | 3nS TYP | VDD=-15V, VGS=-10V, RG=50, ID=-0.15A | 8.6nS TYP | nS |
| Turn-On Rise Time | tr | 17nS TYP | 20nS TYP | nS | ||
| Turn-Off Delay Time | td(off) | 10nS TYP | 14nS TYP | nS | ||
| Turn-Off Fall Time | tf | 21nS TYP | 77nS TYP | nS | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | 1.2V MAX | VGS=0V, IS=-1A, TJ=25 | -1.2V MAX | V |
| Package Dimensions (mm) | A | 0.90 - 1.00 | ||||
| A1 | 0.00 - 0.10 | |||||
| B | 0.10 - 0.30 | |||||
| b1 | 1.30 | |||||
| D | 1.80 - 2.20 | |||||
| E | 2.00 - 2.20 | |||||
| E1 | 1.15 - 1.35 | |||||
| e | 0.65 TYP. | |||||
| L | 0.10 - 0.25 | |||||
| L1 | 0.15 - 0.4 | |||||
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