PNP Transistor Suzhou Good-Ark Elec GSBCP53-10 with High Collector Current and Low Saturation Voltage
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Product Description
Product Overview
The GSBCP51-52-53 series are PNP transistors designed for AF driver and output stages. They offer high collector current, low collector-emitter saturation voltage, and complementary NPN types (GSBCP54/GSBCP55/GSBCP56) are available.
Product Attributes
- Brand: GSBCP (implied)
- Package Type: SOT-223
Technical Specifications
| Parameter | Symbol | GSBCP51 | GSBCP52 | GSBCP53 | Unit | Test Conditions |
| Collector-Base Voltage | VCBO | -45 | -60 | -100 | V | |
| Collector-Emitter Voltage | VCEO | -45 | -60 | -80 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current - Continuous | IC | 1.5 | A | |||
| Collector Power Dissipation | PC | 94 | mW | |||
| Thermal Resistance Junction to Ambient | RJA | 1.5 | /W | |||
| Storage Temperature Range | TSTG | -65 to +150 | ||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -45 | -60 | -80 | V | IC= -10mA,IB=0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | -45 | -60 | -100 | V | IC=- 0.1mA,IE=0 |
| Base-Emitter Breakdown Voltage | V(BR)EBO | -5 | V | IE= -10A,IC=0 | ||
| Collector Cut-Off Current | ICBO | -100 | nA | VCB= -30 V, IE=0 | ||
| DC Current Gain | hFE(1) | 25 | VCE=-2V, IC=-5mA | |||
| DC Current Gain | hFE(2) | 63-250 | VCE= -2V, IC=-150mA | |||
| DC Current Gain | hFE(3) | 25 | VCE= -2V, IC=-500mA | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 | V | IC=-500mA,IB=-50mA | ||
| Base-Emitter Voltage | VBE | -1 | V | VCE=-2V, IC=-500mA | ||
| Transition Frequency | fT | 100 | MHz | VCE=-10V,IC=-50mA, f=100MHz | ||
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