China PNP Transistor Suzhou Good-Ark Elec GSBC807-40W Featuring SOT-323 Package and Automatic Insertion Design for sale

PNP Transistor Suzhou Good-Ark Elec GSBC807-40W Featuring SOT-323 Package and Automatic Insertion Design

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The GSBC807W is a PNP Transistor housed in a SOT-323 small outline plastic package. It is designed for automatic insertion and features an epitaxial planar die construction. This transistor is suitable for various electronic applications requiring PNP functionality.

Product Attributes

Brand: GSBC (implied by product code)
Package Type: SOT-323
Construction: Epitaxial planar die
Insertion: Ideally for automatic insertion

Technical Specifications

Parameter	Symbol	Conditions	Min.	Max.	Unit
Collector-Base Breakdown Voltage	V(BR)CBO	IC=-10A, IE=0	-50	-	V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC=-10mA, IB=0	-45	-	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=-1A, IC=0	-5	-	V
Collector Cut-Off Current	ICBO	VCB=-20V, IE=0	-	-100	nA
Emitter Cut-Off Current	IEBO	VEB=-5V, IC=0	-	-100	nA
DC Current Gain (hFE)	hFE(1)	VCE=-1V, IC=-100mA	100	600
DC Current Gain (hFE)	hFE(2)	VCE=-1V, IC=-500mA	40	-
Collector-Emitter Saturation Voltage	VCE(sat)	IC=-500mA, IB=-50mA	-	-0.70	V
Base-Emitter Voltage	VBE(on)	VCE=-1V, IC=-500mA	-	-1.20	V
Transition Frequency	fT	VCE=-5V, IC=-10mA, f=100MHz	80	-	MHz
Collector Output Capacitance	Cob	VCB=-10V, IE=0, f=100MHz	-	10	pF
Collector Power Dissipation	PC	(TA=25C unless otherwise specified)	-	200	mW
Thermal Resistance Junction To Ambient	RJA		-	625	C/W
Storage Temperature	TSTG		-55	+150	C
Junction Temperature	TJ		-55	+150	C