Power Switching MOSFET Siliup SP010N07GHTH 100V N Channel with Low RDSon and Split Gate Trench Technology

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Product Description

Product Overview

The SP010N07GHTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supplies.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP010N07GHTH
Technology: Advanced Split Gate Trench Technology
Channel Type: N-Channel
Package: TO-252

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-Source Voltage	VDS	-	-	-	100	V
Gate-Source Voltage	VGS	-	-	-	20	V
Continuous Drain Current (Tc=25)	ID	-	-	-	80	A
Continuous Drain Current (Tc=100)	ID	-	-	-	55	A
Pulsed Drain Current	IDM	-	-	-	320	A
Single Pulse Avalanche Energy	EAS	VDD=50V, VGS=10V, L=0.5mH, RG=25	-	289	-	mJ
Power Dissipation (Tc=25)	PD	-	-	-	120	W
Thermal Resistance Junction-to-Case	RJC	-	-	1.04	-	/W
Storage Temperature Range	TSTG	-	-55	-	150
Operating Junction Temperature Range	TJ	-	-55	-	150
Drain-Source Breakdown Voltage	BVDSS	ID = 250A, VGS = 0V	100	-	-	V
Drain Cut-Off Current	IDSS	VDS = 80V, VGS = 0V	-	-	1	uA
Gate Leakage Current	IGSS	VGS = 20V, VDS = 0V	-	-	0.1	nA
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250A	2	3	4	V
Drain-Source ON Resistance	RDS(ON)	VGS = 10V, ID = 30A	-	6.9	8.7	m
Input Capacitance	Ciss	VDS =50V, VGS = 0V, f = 1.0MHz	-	2335	-	pF
Output Capacitance	Coss	-	-	330	-	pF
Reverse Transfer Capacitance	Crss	-	-	7	-	pF
Total Gate Charge	Qg	VDS=50V , VGS=10V , ID=50A	-	35	-	nC
Gate-Source Charge	Qgs	-	-	5.5	-	-
Gate-Drain Charge	Qgd	-	-	6	-	-
Turn-On Delay Time	td(on)	VGS = 50V, VDS =50V, ID=50A RG = 4.7	-	8	-	nS
Rise Time	tr	-	-	13	-	-
Turn-Off Delay Time	td(off)	-	-	42	-	-
Fall Time	tf	-	-	19	-	-
Source-Drain Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS	-	-	-	80	A
Reverse Recovery Time	Trr	IS=15A, di/dt=100A/us, TJ=25	-	49	-	nS
Reverse Recovery Charge	Qrr	-	-	42	-	nC

Package Information (TO-252)	Dimensions In Millimeters	Dimensions In Inches
Symbol	Min.	Max.	Min.	Max.
A	2.200	2.400	0.087	0.094
A1	0.000	0.127	0.000	0.005
b	0.660	0.860	0.026	0.034
c	0.460	0.580	0.018	0.023
D	6.500	6.700	0.256	0.264
D1	5.100	5.460	0.201	0.215
D2	4.830 REF.	0.190 REF.	-	-
E	6.000	6.200	0.236	0.244
e	2.186	2.386	0.086	0.094
L	9.800	10.400	0.386	0.409
L1	2.900 REF.	0.114 REF.	-	-
L2	1.400	1.700	0.055	0.067
L3	1.600 REF.	0.063 REF.	-	-
L4	0.600	1.000	0.024	0.039
	1.100	1.300	0.043	0.051
	0	8	0	8
h	0.000	0.300	0.000	0.012
V	5.350 REF.	0.211 REF.	-	-