High Current Power MOSFET Slkor SL60N02D Offering Low On Resistance and Fast Switching Performance

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

This Power MOSFET utilizes advanced TRENCH technology to minimize conduction loss, offer superior switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. It is designed for applications requiring low on-resistance and fast switching, including PWM applications, load switching, and power management.

Product Attributes

Brand: SLKORMicro (inferred from website URL)
Model: SL60N02D
Technology: Advanced TRENCH
Certifications: Not specified
Origin: Not specified
Material: Not specified
Color: Not specified

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition	Min.	Typ.	Max.
Absolute Maximum Ratings
Drain-source Voltage	VDS	20	V
Gate-source Voltage	VGS	±12	V
Continuous Drain Current	ID	60	A	TC=25°C
Continuous Drain Current	ID	39	A	TC=100°C
Pulsed Drain Current	IDM	240	A	TC=25°C, Tp Limited By Tjmax (note1)
Maximum Power Dissipation	PD	40	W	TC=25°C
Avalanche energy, single Pulse	EAS	90	mJ	L=0.5mH (note2)
Operating Junction And Storage Temperature	Tj,Tstg	-55 To 150	°C
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	TL	300	°C
Thermal Resistance
Junction-to-Case	RθJC	3.125	°C/W				Max.
Electrical Characteristics
Off Characteristic
Drain-source breakdown voltage	BVDSS	20	V	VGS=0V, ID=250μA
Zero gate voltage drain current	IDSS	1	μA	VDS=20V, VGS=0V			Max.
Gate-source leakage current	IGSS	±100	nA	VGS=±12V, VDS=0V			Max.
On Characteristic
Gate threshold voltage	VGS(th)	0.4	1.0	V	VDS=VGS, ID=250μA	Min.	Typ.	Max.
Drain-source on-state resistance	RDS(on)	5	6.8	mΩ	VGS=4.5V, ID=30A		Typ.	Max.
Drain-source on-state resistance	RDS(on)	7.1	9.8	mΩ	VGS=2.5V, ID=30A		Typ.	Max.
Dynamic Characteristic
Input Capacitance	Ciss	1625	PF	VGS=0V, VDS=10V, f=1.0MHz		Typ.
Output Capacitance	Coss	280	PF	VGS=0V, VDS=10V, f=1.0MHz		Typ.
Reverse Transfer Capacitance	Crss	269	PF	VGS=0V, VDS=10V, f=1.0MHz		Typ.
Switching Characteristics
Turn-on delay time	td(on)	17	nS	VGS=4.5V ,VDS=10V, ID=30ARG=3Ω		Typ.
Turn-on Rise time	tr	50	nS	VGS=4.5V ,VDS=10V, ID=30ARG=3Ω		Typ.
Turn-off delay time	td(off)	75	nS	VGS=4.5V ,VDS=10V, ID=30ARG=3Ω		Typ.
Turn-off Fall time	tf	25	nS	VGS=4.5V ,VDS=10V, ID=30ARG=3Ω		Typ.
Gate Total Charge	QG	43.7	nC	VGS=10V, VDS=10V, ID=60A		Typ.
Gate-Source Charge	QgS	2.7	nC	VGS=10V, VDS=10V, ID=60A		Typ.
Gate-Drain Charge	QgD	10.9	nC	VGS=10V, VDS=10V, ID=60A		Typ.
Drain-Source Diode Characteristics
Body Diode Forward Voltage	VSD	0.9	1.2	V	VGS=0V, ISD=10A		Typ.	Max.
Body Diode Forward Current	Is	60	A