Low voltage drop transistor Slkor 2SC5585 featuring high current capability for power electronics
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Product Description
Product Overview
This NPN transistor offers high current capability with a low VCE(sat) of 250mV at IC = 200mA / IB = 10mA. It is suitable for applications requiring efficient power handling and low voltage drop. The transistor is available in a SOT-523 package.
Product Attributes
- Marking: BX
- Package Type: SOT-523 Plastic-Encapsulate Transistors
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | IC=10A, IE=0 | 15 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 12 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A, IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=15 V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=6V, IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=2V, IC=10mA | 270 | 680 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=200mA,IB=10mA | 0.25 | V | ||
| Transition frequency | fT | VCE=2V,IC=10mA, f=100MHz | 320 | MHz | ||
| Collector output capacitance | Cob | VCB=10V,IE=0,f=1MHz | 7.5 | pF |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector- Base Voltage | VCBO | 15 | V |
| Collector-Emitter Voltage | VCEO | 12 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current -Continuous | IC | 0.5 | A |
| Collector Power Dissipation | PC | 0.15 | W |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | Tstg | -55-150 |
| Pin | Name |
|---|---|
| 1 | BASE |
| 2 | EMITTER |
| 3 | COLLECTOR |
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