ROHS compliant MOSFET Siliup SP3012CNK 30V designed for surface mount and motor control applications

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Product Description

Product Overview

The SP3012CNK is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, it offers fast switching speeds and is ROHS Compliant & Halogen-Free. This MOSFET is 100% tested for single pulse avalanche energy. It is ideal for use in DC-DC converters and motor control applications.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Compliance: ROHS Compliant & Halogen-Free
Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter	Symbol	N-Channel Conditions	N-Channel Rating	P-Channel Conditions	P-Channel Rating	Unit
Drain-Source Voltage	VDS		30		-30	V
Gate-Source Voltage	VGS		20		20	V
Continuous Drain Current (Tc=25C)	ID		24		-18	A
Pulse Drain Current Tested	IDM		96		-72	A
Single pulsed avalanche energy	EAS		49		64	mJ
Power Dissipation (Tc=25C)	PD		18			W
Thermal Resistance Junction-to-Case	RJC		6.9			C/W
Storage Temperature Range	TSTG		-55 to 150			C
Operating Junction Temperature Range	TJ		-55 to 150			C
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	30	VGS=0V , ID=-250uA	-30	V
Drain-Source Leakage Current	IDSS	VDS=24V , VGS=0V , TJ=25	1	VDS=-24V , VGS=0V , TJ=25	-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	100	VGS=20V , VDS=0V	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.0 - 2.5	VGS=VDS , ID =-250uA	-1.0 - -2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS = 10V, ID = 8A	11 - 15	VGS =-10V, ID =-6A	21 - 27	m
Static Drain-Source On-Resistance	RDS(ON)	VGS = 4.5V, ID = 6A	16 - 21	VGS =-4.5V, ID =-4A	30 - 40	m
Input Capacitance	Ciss	VDS=15V , VGS=0V , f=1MHz	940	VDS=-15V , VGS=0V , f=1MHz	1070	pF
Output Capacitance	Coss		131		146	pF
Reverse Transfer Capacitance	Crss		109		142	pF
Total Gate Charge	Qg	VDS=15V , VGS=4.5V , ID=8A	9.6	VDS=-30V , VGS=-10V , ID=-6A	21	nC
Gate-Source Charge	Qgs		3.9		2.1	nC
Gate-Drain Charge	Qg		3.4		5.6	nC
Turn-On Delay Time	Td(on)	VDD=15V VGS=10V , RG=1.5, ID=8A	4.2	VDD=-15V VGS=-10V , RG=6, ID=-1A	7	nS
Rise Time	Tr		8.2		9	nS
Turn-Off Delay Time	Td(off)		31		30	nS
Fall Time	Tf		4		18	nS
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	1.2	VGS=0V , IS=-1A , TJ=25	-1.2	V
Maximum Body-Diode Continuous Current	IS		24		-18	A
Reverse recover time	Trr	IS=20A, di/dt=100A/us, Tj=25	1.2	IS=-20A, di/dt=-100A/us, Tj=25	50	nS
Reverse recovery charge	Qrr		9		31	nC

PDFN5X6-8L Package Information
Symbol	Dimensions In Millimeters	Dimensions In Inches
A	0.900 - 1.000	0.035 - 0.039
A3	0.254 REF.	0.010 REF.
D	4.944 - 5.096	0.195 - 0.201
E	5.974 - 6.126	0.235 - 0.241
D1	1.470 - 1.870	0.058 - 0.074
D2	0.470 - 0.870	0.019 - 0.034
E1	3.375 - 3.575	0.133 - 0.141
D3	4.824 - 4.976	0.190 - 0.196
E2	5.674 - 5.826	0.223 - 0.229
k	1.190 - 1.390	0.047 - 0.055
b	0.350 - 0.450	0.014 - 0.018
e	1.270 TYP.	0.050 TYP.
L	0.559 - 0.711	0.022 - 0.028
L1	0.424 - 0.576	0.017 - 0.023
H	0.574 - 0.726	0.023 - 0.029
	10 - 12	10 - 12