Durable N Channel MOSFET Slkor BSS205N 20V 2.5A Featuring Trench Power LV Technology for Power Control
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The BSS205N is a 20V/2.5A N-Channel MOSFET featuring Trench Power LV MOSFET technology. It offers high power and current handling capabilities, making it suitable for PWM applications and load switching.
Product Attributes
- Brand: SLKORMicro
- Device Code: B205
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) | Drain-Source Breakdown Voltage | VGS=0VID=250A | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | VDS=20VVGS=0V | -- | -- | 1 | A | |
| Gate-Body Leakage Current | VGS=12VVDS=0V | -- | -- | 100 | nA | |
| Gate Threshold Voltage | VDS=VGSID=11A | 0.7 | -- | 1.2 | V | |
| Drain-Source On-State Resistance | VGS=4.5VID=2.5A | -- | 40 | 50 | m | |
| Electrical Characteristics | Drain-Source On-State Resistance | VGS=2.5VID=1.95A | -- | 55 | 85 | m |
| Forward on voltage | Tj=25Is=2.5A | -- | -- | 1.2 | V | |
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | Input Capacitance | VDS=10VVGS=0V f=1MHz | -- | 222 | -- | pF |
| Output Capacitance | VDS=10VVGS=0V f=1MHz | -- | 35 | -- | pF | |
| Reverse Transfer Capacitance | VDS=10VVGS=0V f=1MHz | -- | 25 | -- | pF | |
| Switching Characteristics | Total Gate Charge | VDD=10VID=2.5A VGS=10VRG=3 | -- | 3.6 | -- | nC |
| Gate Source Charge | VDD=10VID=2.5A VGS=10VRG=3 | -- | 0.9 | -- | nC | |
| Gate Drain Charge | VDD=10VID=2.5A VGS=10VRG=3 | -- | 0.75 | -- | nC | |
| Switching Characteristics | Turn-on Delay Time | VDD=10VID=2.5A VGS=10VRG=3 | -- | 6.8 | -- | nS |
| Turn-on Rise Time | VDD=10VID=2.5A VGS=10VRG=3 | -- | 57 | -- | nS | |
| Turn-Off Delay Time | VDD=10VID=2.5A VGS=10VRG=3 | -- | 14 | -- | nS | |
| Turn-Off Fall Time | VDD=10VID=2.5A VGS=10VRG=3 | -- | 55 | -- | nS | |
| Absolute Maximum Ratings | Drain-Source Breakdown Voltage | -- | 20 | -- | -- | V |
| Gate-Source Voltage | -- | -- | 12 | -- | V | |
| Maximum Junction Temperature | -- | -- | 150 | -- | C | |
| Storage Temperature Range | -- | -50 | -- | 155 | C | |
| Common Ratings (TC=25C Unless Otherwise Noted) | Diode Continuous Forward Current | Tc=25C | -- | 0.5 | -- | A |
| Pulse Drain Current | Tc=25C | -- | 10 | -- | A | |
| Tested Continuous Drain Current | Tc=25C | -- | 2.5 | -- | A | |
| Thermal Resistance | Junction-to-Ambient | Mounted on Large Heat Sink | -- | 178 | -- | C/ W |
| Maximum Power Dissipation | -- | TA=25unless otherwise noted | -- | -- | -- | W |
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