Durable N Channel MOSFET Slkor SL2324 with Enhanced Thermal Performance and Low Conduction Loss
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
SL2324 N-Channel MOSFET
The SL2324 is an N-Channel MOSFET featuring Trench Power MV MOSFET technology, designed for excellent heat dissipation and high-density cell design for low RDS(ON). It is suitable for DC-DC converters and power management functions.
Product Attributes
- Brand: SLKOR Micro
- Model: SL2324
- Package: SOT-23
- Technology: Trench Power MV MOSFET
- Channel Type: N-Channel
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Breakdown Voltage | Tc=25C | 100 | -- | -- | V |
| VGS | Gate-Source Voltage | 20 | -- | -- | V | |
| TJ | Maximum Junction Temperature | -- | -- | 150 | C | |
| TSTG | Storage Temperature Range | -50 | -- | 155 | C | |
| IS | Diode Continuous Forward Current | Tc=25C, Mounted on Large Heat Sink | -- | -- | 2.3 | A |
| IDM | Pulse Drain Current | Tc=25C | -- | -- | 9 | A |
| ID | Tested Continuous Drain Current@GS=10V | Tc=25C | -- | -- | 2.3 | A |
| PD | Maximum Power Dissipation | TA=25unless otherwise noted | -- | -- | 1.3 | W |
| RJA | Thermal Resistance Junction-Ambient | ((*1 in2 Pad of 2-oz Copper), Max.) | -- | 96 | -- | C/W |
| Common Ratings | ||||||
| VGS | Gate-Source Voltage | TC=25C Unless Otherwise Noted | -- | -- | 20 | V |
| Electrical Characteristics | ||||||
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 100 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=100VVGS=0V | -- | -- | 1 | uA |
| IGSS | Gate-Body Leakage Current | VGS=20VVDS=0V | -- | -- | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250A | 1.0 | 1.8 | 2.5 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=10V ID=2A | -- | 195 | 234 | m |
| RDS(on) | Drain-Source On-State Resistance | VGS=4.5VID=1A | -- | 230 | 278 | m |
| CISS | Input Capacitance | VDS=50VID=1.3A VGS=10VRG=1 | -- | 387 | -- | pF |
| COSS | Output Capacitance | VDS=50VID=1.3A VGS=10VRG=1 | -- | 30 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=50VID=1.3A VGS=10VRG=1 | -- | 28 | -- | pF |
| Qg | Total Gate Charge | VDS=50VID=1.3A VGS=10VRG=1 | -- | 9.5 | -- | nC |
| Qgs | Gate Source Charge | VDS=50VID=1.3A VGS=10VRG=1 | -- | 1.8 | -- | nC |
| Qgd | Gate Drain Charge | VDS=50VID=1.3A VGS=10VRG=1 | -- | 2 | -- | nC |
| td(on) | Turn-on Delay Time | VDS=50VID=1.3A VGS=10VRG=1 | -- | 4 | -- | nS |
| tr | Turn-on Rise Time | VDS=50VID=1.3A VGS=10VRG=1 | -- | 17.5 | -- | nS |
| td(off) | Turn-Off Delay Time | VDS=50VID=1.3A VGS=10VRG=1 | -- | 13 | -- | nS |
| tf | Turn-Off Fall Time | VDS=50VID=1.3A VGS=10VRG=1 | -- | 28 | -- | nS |
| VSD | Forward on voltage | Tj=25Is=2A | -- | -- | 1.2 | V |
| Source- Drain Diode Characteristics | ||||||
| VSD | Forward on voltage | Tj=25Is=2A | -- | -- | 1.2 | V |
| Static Electrical Characteristics | ||||||
| RDS(on) | Drain-Source On-State Resistance | VDS=50VID=2A VGS=10V | -- | 195 | 234 | m |
| RDS(on) | Drain-Source On-State Resistance | VGS=4.5VID=1A | -- | 230 | 278 | m |
| Dynamic Electrical Characteristics | ||||||
| CISS | Input Capacitance | VDS=10VVGS=0V f=1MHz | -- | 387 | -- | pF |
| COSS | Output Capacitance | VDS=10VVGS=0V f=1MHz | -- | 30 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=10VVGS=0V f=1MHz | -- | 28 | -- | pF |
| Switching Characteristics | ||||||
| Qg | Total Gate Charge | VDS=50VID=1.3A VGS=10V | -- | 9.5 | -- | nC |
| Qgs | Gate Source Charge | VDS=50VID=1.3A VGS=10V | -- | 1.8 | -- | nC |
| Qgd | Gate Drain Charge | VDS=50VID=1.3A VGS=10V | -- | 2 | -- | nC |
| td(on) | Turn-on Delay Time | VDS=50VID=1.3A VGS=10V | -- | 4 | -- | nS |
| tr | Turn-on Rise Time | VDS=50VID=1.3A VGS=10V | -- | 17.5 | -- | nS |
| td(off) | Turn-Off Delay Time | VDS=50VID=1.3A VGS=10V | -- | 13 | -- | nS |
| tf | Turn-Off Fall Time | VDS=50VID=1.3A VGS=10V | -- | 28 | -- | nS |
| VSD | Forward on voltage | Tj=25Is=2A | -- | -- | 1.2 | V |
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