NPN Silicon Epitaxial Planar Transistor Slkor BC846BW for General Purpose Switching and Amplification

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Product Description

Product Overview

The BC846W-BC850W series are NPN Silicon Epitaxial Planar Transistors designed for general purpose and switching applications. These transistors offer a range of current gain (hFE) options and are suitable for various electronic circuits requiring amplification or switching functions.

Product Attributes

Type: NPN Silicon Epitaxial Planar Transistor
Series: BC846W-BC850W

Technical Specifications

Absolute Maximum Ratings (Ta = 25 C)		BC846W	BC847W	BC848W	BC849W	BC850W	Unit
Voltages	Collector Base Voltage (VCBO)	80	50	30	30	50	V
	Collector Emitter Voltage (VCEO)	65	45	30	30	45	V
	Emitter Base Voltage (VEBO)	6	6	5	5	5	V
	Collector Base Voltage (VCBO) at IC = 10 A	80	50	30	30	50	V
	Collector Emitter Voltage (VCEO) at IC = 10 mA	65	45	30	30	45	V
Emitter Base Voltage (VEBO) at IE = 1 A		6	6	5	5	5	V
Collector Current (IC)		100					mA
Peak Collector Current (ICM)		200					mA
Total Power Dissipation (Ptot)		200					mW
Junction Temperature (Tj)		150					C
Storage Temperature Range (Tstg)		-55 to +150					C
Characteristics at Ta = 25 C
DC Current Gain (hFE) at VCE = 5 V, IC = 2 mA	BC846AW~BC850AW	110	200	420	-	-	-
	BC846BW~BC850BW	220	450	800	-	-	-
	BC846CW~BC850CW	-	-	-	-	-	-
Collector Base Cutoff Current (ICBO) at VCB = 30 V		-15					nA
Emitter Base Cutoff Current (IEBO) at VEB = 5 V		-100					nA
Collector Emitter Saturation Voltage (VCE(sat))	at IC = 10 mA, IB = 0.5 mA	-0.25					V
Collector Emitter Saturation Voltage (VCE(sat))	at IC = 100 mA, IB = 5 mA	-0.6					V
Base Emitter Voltage (VBE) at VCE = 5 V	IC = 2 mA	0.58					V
Base Emitter Voltage (VBE) at VCE = 5 V	IC = 10 mA	0.7					V
Transition Frequency (fT) at VCE = 5 V, IC = 10 mA, f = 100 MHz		100					MHz
Collector Output Capacitance (Cob) at VCB = 10 V, IE = 0, f = 1 MHz		-4.5					pF