Load Switching and Power Management Using Slkor SL2318 N Channel MOSFET with Low Gate Source Voltage

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SL2318 is an N-Channel Advanced Power MOSFET designed for efficient load switching, DC/DC conversion, and general switching circuit applications. It features low RDS(on) at 10V gate-source voltage and 4.5V logic-level control, housed in a compact SOT23 package. This Pb-free and RoHS compliant device offers reliable performance for power management tasks.

Product Attributes

Brand: SLKORMicro
Package: SOT23
Certifications: PbFree, RoHS Compliant

Technical Specifications

Part Number	V(BR)DSS (V)	RDS(ON) Typ (m @ VGS)	ID Max (A @ TA)	Package	Marking	Packing	Min Unit Quantity
SL2318	40	29 @ 10V, 36 @ 4.5V	4.1A @ 25C	SOT23	SL2318	Reel	3000

Symbol	Parameter	Condition	Min	Typ	Max	Unit
Common Ratings (TA=25C Unless Otherwise Noted)
VGS	Gate-Source Voltage				20	V
(BR)DSS	Drain-Source Breakdown Voltage		40			V
TJ	Maximum Junction Temperature				150	C
TSTG	Storage Temperature Range		-50		150	C
ID	Pulse Drain Current Tested	TA=25C		22.6		A
ID	Continuous Drain Current	TA=25C		4.1		A
ID	Continuous Drain Current	TA=70C		3.2		A
PD	Maximum Power Dissipation	TA=25C		1.56		W
PD	Maximum Power Dissipation	TA=70C		0.9		W
RJA	Thermal Resistance Junction-Ambient	Mounted on Large Heat Sink		80		C/W
Static Electrical Characteristics @ TJ = 25C (unless otherwise stated)
V(BR)DSS	Drain-Source Breakdown Voltage	VGS=0V, ID=250A	40			V
IDSS	Zero Gate Voltage Drain Current	VDS=40V, VGS=0V (TA=25)			1	A
IDSS	Zero Gate Voltage Drain Current	VDS=40V, VGS=0V (TA=125)			100	uA
IGSS	Gate-Body Leakage Current	VGS=20V, VDS=0V			100	nA
VGS(TH)	Gate Threshold Voltage	VDS=VGS, ID=250A	0.7	1.2	2.0	V
RDS(ON)	Drain-Source On-State Resistance	VGS=10V, ID=5A		29	38	m
RDS(ON)	Drain-Source On-State Resistance	VGS=4.5V, ID=4A		36	52	m
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated)
Ciss	Input Capacitance	VDS=20V, VGS=0V, f=1MHz		340		pF
Coss	Output Capacitance			60		pF
Crss	Reverse Transfer Capacitance			30		pF
Rg	Gate Resistance	f=1MHz		7.8
Qg	Total Gate Charge	VDS=20V ID=5A, VGS=10V		5.8		nC
Qg s	Gate Source Charge			0.4		nC
Qg d	Gate Drain Charge			2		nC
Switching Characteristics @ TJ = 25C (unless otherwise stated)
td(on)	Turn on Delay Time	VDD=20V, ID=3.5A, RG=1, VGS=4.5V		4.1		ns
tr	Turn on Rise Time			11.6		ns
td(off)	Turn Off Delay Time			24		ns
tf	Turn Off Fall Time			7.6		ns
Source Drain Diode Characteristics @ TJ = 25C (unless otherwise stated)
ISD	Source drain current(Body Diode)	TA=25			1.75	A
VSD	Forward on voltage	Tj=25, ISD=3.5A, VGS=0V		0.79	1.2	V