Load Switching Using Slkor SL4407A P Channel Enhancement Mode Field Effect Transistor with Low RDS

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Product Description

Product Overview

The SL4407A is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology for low RDS(ON) and high-speed switching. It is designed for applications such as battery protection, power management, and load switching.

Product Attributes

Brand: SLKormicro
Model: SL4407A
Technology: Trench Power LV MOSFET
Package: SOP-8

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings
Drain-source Voltage	VDS				-30	V
Gate-source Voltage	VGS				±20	V
Drain Current	ID				-12	A
Pulsed Drain Current	IDM				-55	A
Single Pulse Avalanche Energy	EAS				105	mJ
Total Power Dissipation @ TA=25	PD				3.2	W
Junction-to-Ambient Thermal Resistance @ Steady State	RJA				39	/ W
Junction and Storage Temperature Range	TJ ,TSTG		-55		+150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS= 0V, ID=-250A	-30			V
Zero Gate Voltage Drain Current	IDSS	VDS=-30V,VGS=0V,TC=25			-1	μA
Gate-Body Leakage Current	IGSS	VGS= ±20V, VDS=0V			±100	nA
Gate Threshold Voltage	VGS(th)	VDS= VGS, ID=-250A	-1.2	-1.7	-2.8	V
Static Drain-Source On-Resistance	RDS(ON)	VGS= -20V, ID=-12A		9.0	11	mΩ
		VGS= -10V, ID=-10A		10.2	13	V
		VGS= -6.0V, ID=-8A		12.3	17
		VGS= -4.5V, ID=-8A		16	27
Diode Forward Voltage	VSD	IS=-12A,VGS=0V		-0.8	-1.2	V
Input Capacitance	Ciss	VDS=-15V,VGS=0V,f=1MHZ		2152		pF
Output Capacitance	Coss			308
Reverse Transfer Capacitance	Crss			242
Total Gate Charge	Qg	VGS= -10V,VDS= -15V,ID= -12A		40.1		nC
Gate Source Charge	Qgs			8.4
Gate Drain Charge	Qg			8.6
Reverse Recovery Charge	Qrr	IF= -12A, di/dt= 100A/us		7.8
Reverse Recovery Time	trr				18	ns
Turn-on Delay Time	tD(on)	VGS= -10V,VDD= -15V, ID= -1A, RGEN= 2.5Ω		8
Turn-on Rise Time	tr			19
Turn-off Delay Time	tD(off)			75
Turn-off Fall Time	tf			46