Power Switching Bipolar Transistor Slkor SL13003 with 400V Collector Emitter Voltage and 1A Current
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Product Description
Product Overview
The SL13003 is a bipolar transistor designed for power switching applications. It offers a high collector-emitter breakdown voltage of 400V and a continuous collector current of 1A, with a power dissipation of 1.25W. This transistor is suitable for general-purpose power switching and amplification tasks in various electronic circuits.
Product Attributes
- Brand: SLKOR Micro
- Model: SL13003
- Package Type: TO-126
- Equivalent Circuit Pins: 1. BASE, 2. COLLECTOR, 3. EMITTER
- Datasheet Revision: Rev.1
- Datasheet Date: 03 May 2019
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | (Ta=25 unless otherwise noted) | 600 | V | ||
| Collector-Emitter Voltage | VCEO | (Ta=25 unless otherwise noted) | 400 | V | ||
| Emitter-Base Voltage | VEBO | (Ta=25 unless otherwise noted) | 6 | V | ||
| Collector Current - Continuous | IC | (Ta=25 unless otherwise noted) | 1 | A | ||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 1.25 | W | ||
| Thermal Resistance Junction to Ambient | RJA | (Ta=25 unless otherwise noted) | 100 | /W | ||
| Operation Junction and Storage Temperature Range | TJ,Tstg | (Ta=25 unless otherwise noted) | -55 | +150 | ||
| Collector-base breakdown voltage | V(BR)CBO | IC= 0.1mA,IE=0 | 600 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 400 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=0.1mA,IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=600V,IE=0 | 100 | uA | ||
| Collector cut-off current | ICEO | VCE=400V,IB=0 | 100 | uA | ||
| Emitter cut-off current | IEBO | VEB=7V,IC=0 | 10 | uA | ||
| DC current gain | hFE(1) | VCE=10V, IC=200mA | 20 | 30 | ||
| DC current gain | hFE(2) | VCE=10V, IC=250A | 5 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=200mA,IB=40mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=200mA,IB=40mA | 1.1 | V | ||
| Transition frequency | fT | VCE=10V, IC=100mA,f=1MHz | 5 | MHz | ||
| Fall time | tf | IC=100mA | 0.5 | s | ||
| Storage time | tS* | IC=100mA | 2 | 4 | s |
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