N Channel MOSFET Slkor SL3134KL with Low Threshold Voltage and Halogen Free Lead Free Package Design
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Product Description
Product Overview
This N-Channel Enhancement Mode MOSFET features advanced trench process technology, offering a low threshold voltage and fast switching speed. It is halogen-free, lead-free, and ESD protected up to 2KV (HBM). Ideal for load switching in portable devices and as a voltage-controlled small signal switch.
Product Attributes
- Brand: SLKormicro
- Model: SL3134KL
- Package: DFN1006-3L
- Certifications: Halogen-Free & Lead-Free
- ESD Protection: up to 2KV (HBM)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 20 | V | |
| Gate-Source Voltage | VGS | ±12 | V | |
| Continuous Drain Current | ID | 0.75 | A | |
| Peak Drain Current, Pulsed | IDM | 1.8 | A | 1) |
| Power Dissipation | Ptot | 0.7 | W | 2) |
| Operating Junction Temperature | TJ | -55~150 | ||
| Storage Temperature Range | Tstg | -55~150 | ||
| Thermal Characteristics | ||||
| Thermal Resistance from Junction to Ambient | RθJA | 175 | /W | 2) |
| Static Parameters (at Ta = 25 unless otherwise specified) | ||||
| Drain-Source Breakdown Voltage at ID = 250 µA | BVDSS | 20 | V | |
| Drain-Source Leakage Current at VDS = 20 V, VGS = 0 V | IDSS | 1.0 | µA | |
| Gate Leakage Current at VGS = ± 10 V | IGSS | ±10 | µA | |
| Gate-Source Threshold Voltage at VDS = VGS, ID = 250 µA | VGS(th) | 0.35 - 0.7 - 1.1 | V | |
| Drain-Source On-State Resistance at VGS = 4.5 V, ID = 0.65A | RDS(on) | 250 - 500 | mΩ | |
| Drain-Source On-State Resistance at VGS = 2.5V, ID = 0.45 A | RDS(on) | 300 - 700 | mΩ | |
| Dynamic Parameters (at Ta = 25 unless otherwise specified) | ||||
| Forward Transconductance at VDS = 5 V, ID = 0.15 A | gfs | 15 | mS | |
| Input Capacitance at VGS = 0 V, VDS = 16 V, f = 1 MHz | Ciss | 79 | pF | |
| Output Capacitance at VGS = 0 V, VDS = 16 V, f = 1 MHz | Coss | 13 | pF | |
| Reverse Transfer Capacitance at VGS = 0 V, VDS = 16 V, f = 1 MHz | Crss | 9 | pF | |
| Gate charge total at VDS = 10 V, ID = 0.65 A, VGS = 4.5 V | Qg | 1.24 | nC | |
| Gate to Source Charge at VDS = 10 V, ID = 0.65 A, VGS = 4.5 V | Qgs | 0.37 | nC | |
| Gate to Drain Charge at VDS = 10 V, ID = 0.65 A, VGS = 4.5 V | Qgd | 0.27 | nC | |
| Turn-On Delay Time at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ω | td(on) | 6.7 | ns | |
| Turn-On Rise Time at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ω | tr | 4.8 | ns | |
| Turn-Off Delay Time at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ω | td(off) | 17.3 | ns | |
| Turn-Off Fall Time at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ω | tf | 7.4 | ns | |
| Body-Diode Parameters | ||||
| Drain-Source Diode Forward Voltage at IS = 0.15A, VGS = 0 V | VSD | 1.2 | V | |
| Body Diode Reverse Recovery Time at IF = 5.6 A, di/dt = 100 A / µs | trr | 14 | ns | |
| Body Diode Reverse Recovery Charge at IF =5.6A, di/dt = 100 A / µs | Qrr | 0.4 | nC | |
| Notes | ||||
| 1) | Pulse width ≤100us, duty cycle ≤1%, limited by Tjmax. | |||
| 2) | Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air. | |||
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina