Power Management P Channel MOSFET SL03P06A Featuring Ultra Low Rds on for High Density Cell and PWM
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Product Description
Product Description
The SL03P06A is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low Rds(on). It features fully characterized avalanche voltage and current, along with an excellent package for good heat dissipation. This MOSFET is suitable for PWM applications, power management, and load switch functions.
Product Attributes
- Brand: SLKormicro
- Model: SL03P06A
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BV(BR)DSS | VGS=0VID=-250A | -60 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-60VVGS=0V | -- | -- | -1 | uA |
| Gate-Body Leakage Current | IGSS | VGS=20VVDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGSID=-250A | -1.0 | -1.8 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=-10VID=-2A | -- | 110 | 150 | m |
| VGS=-4.5VID=-1A | -- | 147 | 180 | m | ||
| Input Capacitance | CISS | VDS=-15VVGS=0V f=1MHz | -- | 715 | -- | pF |
| Output Capacitance | COSS | VDS=-20VID=-2A f=1MHz | -- | 51 | -- | pF |
| Reverse Transfer Capacitance | CRSS | VDS=-20VID=-2A f=1MHz | -- | 34 | -- | pF |
| Total Gate Charge | Qg | VDS=-20VID=-2A VGS=-4.5V | -- | 6 | -- | nC |
| Gate Source Charge | Qgs | VDS=-20VID=-2A VGS=-4.5V | -- | 3 | -- | nC |
| Gate Drain Charge | Qgd | VDS=-20VID=-2A VGS=-4.5V | -- | 2 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=-12VID=-1A VGS=-10VRG=3.3 | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | VDD=-12VID=-1A VGS=-10VRG=3.3 | -- | 17 | -- | nS |
| Turn-Off Delay Time | td(off) | VDD=-12VID=-1A VGS=-10VRG=3.3 | -- | 22 | -- | nS |
| Turn-Off Fall Time | tf | VDD=-12VID=-1A VGS=-10VRG=3.3 | -- | 21 | -- | nS |
| Forward on voltage | VSD | Tj=25Is=-3A | -- | -- | -1.2 | V |
Absolute Maximum Ratings
| Parameter | Symbol | Tc=25C | Unit |
| Gate-Source Voltage | VGS | 20 | V |
| Drain-Source Breakdown Voltage | VDS | -60 | V |
| Maximum Junction Temperature | TJ | 150 | C |
| Storage Temperature Range | TSTG | -55 to 150 | C |
| Diode Continuous Forward Current | IS | -3.0 | A |
| Pulse Drain Current | IDM | -11 | A |
| Tested Continuous Drain Current | ID | -3.0 | A |
| Maximum Power Dissipation | PD | 1.0 | W |
Thermal Resistance
| Parameter | Symbol | Condition | Value | Unit |
| Thermal Resistance Junction-to-Ambient | RJA | Mounted on Large Heat Sink | 113 | C/W |
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Sellina