Low Forward Voltage Drop Rectifier Taiwan Semiconductor HS1J-K R3G Suitable for Automated Placement

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Product Description

Product Overview

The HS1D-K to HS1M-K series are high-efficiency surface-mount rectifiers from Taiwan Semiconductor. Featuring a glass-passivated junction chip, these rectifiers are ideal for automated placement due to their low forward voltage drop and fast switching speeds, contributing to high efficiency. They are compliant with RoHS Directive 2011/65/EU and WEEE 2002/96/EC, and are halogen-free. Applications include switching mode power supplies (SMPS), adapters, lighting, and converters.

Product Attributes

Brand: Taiwan Semiconductor
Package: DO-214AC (SMA)
Material: Glass passivated junction chip
Certifications: RoHS Directive 2011/65/EU, WEEE 2002/96/EC, IEC 61249-2-21 (Halogen-free)
Flammability Rating: UL 94V-0
Moisture Sensitivity Level: Level 1 (per J-STD-0020)
Terminal Finish: Matte tin plated leads
Whisker Test: Meet JESD 201 class 1A
Color: Green compound available (suffix "G")

Technical Specifications

Parameter	Symbol	HS1D-K	HS1G-K	HS1J-K	HS1K-K	HS1M-K	Unit
KEY PARAMETERS
Average Forward Current	IF(AV)	1	1	1	1	1	A
Repetitive Peak Reverse Voltage	VRRM	200	400	600	800	1000	V
Surge Peak Forward Current	IFSM	30	30	30	30	30	A
Max Junction Temperature	TJ MAX	150	150	150	150	150	C
Package		DO-214AC (SMA)	DO-214AC (SMA)	DO-214AC (SMA)	DO-214AC (SMA)	DO-214AC (SMA)
ABSOLUTE MAXIMUM RATINGS
Repetitive peak reverse voltage	VRRM	200	400	600	800	1000	V
Reverse voltage, total rms value	VR(RMS)	140	280	420	560	700	V
Maximum DC blocking voltage	VDC	200	400	600	800	1000	V
Forward current	IF(AV)	1	1	1	1	1	A
Surge peak forward current, 8.3 ms single half sine-wave	IFSM	30	30	30	30	30	A
Junction temperature	TJ	-55 to +150	-55 to +150	-55 to +150	-55 to +150	-55 to +150	C
Storage temperature	TSTG	-55 to +150	-55 to +150	-55 to +150	-55 to +150	-55 to +150	C
THERMAL PERFORMANCE
Junction-to-ambient thermal resistance	RJA	70	70	70	70	70	C/W
ELECTRICAL SPECIFICATIONS
Forward voltage per diode (IF =1A, TJ=25C)	VF	1.0	1.3	1.7	1.7	1.7	V
Reverse current @ rated VR (TJ = 25C)	IR	5	5	5	5	5	A
Reverse current @ rated VR (TJ =100C)	IR	100	100	100	100	100	A
Reverse current @ rated VR (TJ =125C)	IR	150	150	150	150	150	A
Junction capacitance (1 MHz, VR=4.0V)	CJ	20	15	15	15	15	pF
Reverse recovery time (IF=0.5A , IR=1.0A IRR=0.25A)	trr	50	75	75	75	75	ns