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P Channel Enhancement Mode MOS FET Slkor SL3409 Featuring Low On State Resistance and SOT 23 Package

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

P-Channel Enhancement-Mode MOS FETs designed for various electronic applications. These devices offer reliable performance with key electrical characteristics detailed below.

Product Attributes

  • Brand: SLKormicro
  • Model: SL3409
  • Package: SOT-23

Technical Specifications

CharacteristicSymbolMinTypMaxUnitNotes
Drain-Source Breakdown VoltageBVDSS-30--V(ID = -250uA,VGS=0V)
Gate Threshold VoltageVGS(th)-1.4--2.4V(ID = -250uA,VGS= VDS)
Diode Forward Voltage DropVSD---1V(IS= -1A,VGS=0V)
Zero Gate Voltage Drain CurrentIDSS---1uA(VGS=0V, VDS= -24V)
Zero Gate Voltage Drain CurrentIDSS---5uA(VGS=0V, VDS= -24V, TA=55)
Gate Body LeakageIGSS--+100nA(VGS=+12V, VDS=0V)
Static Drain-Source On-State ResistanceRDS(ON)--130m(ID= -2.2A,VGS= -10V)
Static Drain-Source On-State ResistanceRDS(ON)--200m(ID= -2A,VGS= -4.5V)
Input CapacitanceCISS-954-pF(VGS=0V, VDS= -15V,f=1MHz)
Output CapacitanceCOSS-115-pF(VGS=0V, VDS= -15V,f=1MHz)
Turn-ON Timet(on)-6.3-ns(VDS= -15V, VGS= -10V, RGEN=6)
Turn-OFF Timet(off)-38.2-ns(VDS= -15V, VGS= -10V, RGEN=6)

Maximum Ratings

CharacteristicSymbolMaxUnit
Drain-Source VoltageBVDSS-30V
Gate-Source VoltageVGS+20V
Drain Current (continuous)ID-2.2A
Drain Current (pulsed)IDM-16A
Total Device DissipationPD1000mW(TA=25)
Junction TemperatureTJ150
Storage TemperatureTstg-55to+150

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Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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