200mW Schottky Diode Taiwan Semiconductor BAS40-04 RFG Low Forward Voltage Drop for Adapter Circuits

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Product Description

Product Overview

The BAS40 series are 200mW, Low VF SMD Schottky Barrier Diodes designed for surface mounting. They feature low capacitance, low forward voltage drop, and low stored charge, making them suitable for applications such as adapters and switching power supplies. These diodes are compliant with RoHS directive 2011/65/EU, WEEE 2002/96/EC, and are halogen-free according to IEC 61249-2-21.

Product Attributes

Brand: Taiwan Semiconductor
Series: BAS40 / -04 / -05 / -06
Certifications: RoHS directive 2011/65/EU, WEEE 2002/96/EC, IEC 61249-2-21 (Halogen-free)
Material: Molding compound: UL flammability classification rating 94V-0; Terminal: Matte tin plated leads
Moisture Sensitivity: Level 1, per J-STD-020
Whisker Test: Meet JESD 201 class 1A
Color: Green compound (halogen-free) when packing code suffix "G" is used

Technical Specifications

Parameter	Symbol	BAS40	BAS40-04	BAS40-05	BAS40-06	Unit	Conditions
Repetitive peak reverse voltage	VRRM	40	40	40	40	V
Forward current	IF(AV)	200	200	200	200	mA
Non-repetitive peak forward surge current	IFSM	0.6	0.6	0.6	0.6	A	@ t = 8.3ms
Forward voltage	VF	1.00	1.00	1.00	1.00	V	at IF=40mA
Maximum Junction Temperature	TJ Max.	125	125	125	125	C
Package		SOT-23	SOT-23	SOT-23	SOT-23
Marking code on the device		43	44	45	46
Junction temperature range	TJ	-65 to +125	-65 to +125	-65 to +125	-65 to +125	C
Storage temperature range	TSTG	-65 to +125	-65 to +125	-65 to +125	-65 to +125	C
Junction-to-ambient thermal resistance	RJA	357	357	357	357	C/W
Forward voltage per diode	VF	-0.38	-0.38	-0.38	-0.38	V	IF = 1mA, TJ = 25C
Reverse current per diode	IR	-0.2	-0.2	-0.2	-0.2	A	VR=30V, TJ = 25C
Reverse Breakdown Voltage	V(BR)	40	40	40	40	V	IR=10A
Junction capacitance	CJ	-5.0	-5.0	-5.0	-5.0	pF	1 MHz, VR=1V
Reverse Recovery Time	trr	-5.0	-5.0	-5.0	-5.0	ns	IF=IR=10mA, RL=100, IRR=1mA