P Channel MOSFET Slkor SLE0D50AP with fully characterized avalanche energy and low on resistance
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Product Description
Product Overview
The SLE0D50AP is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low RDS(ON). It features fully characterized avalanche voltage and current, ensuring good stability and uniformity with high EAS. This MOSFET is ideal for battery and loading switching applications and boasts an excellent package for efficient heat dissipation.
Product Attributes
- Brand: SLKORMicro
- Model: SLE0D50AP
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| VDS | -30 | V | |||
| VGS | ±20 | V | |||
| EAS | Single pulse avalanche energy | 81 | mJ | ||
| TJ,TSTG | Storage Temperature Range | -55 | 175 | °C | |
| IS | Diode Continuous Forward Current (Tc=25°C) | -50 | A | ||
| IDM | Pulse Drain Current (Tc=25°C) | -200 | A | ||
| ID | Tested Continuous Drain Current (Tc=25°C) | -50 | A | ||
| PD | Maximum Power Dissipation (TA=25°C) | W | |||
| RθJA | Thermal Resistance Junction-Ambient | 55 | ° C/W | ||
| Common Ratings | |||||
| VGS | Gate-Source Voltage (TC=25°C) | V | |||
| BV(BR)DSS | Drain-Source Breakdown Voltage (VGS=0V, ID=-250μA) | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current (VDS=-30V, VGS=0V) | -1 | μA | ||
| IGSS | Gate-Body Leakage Current (VGS=±20V, VDS=0V) | ±100 | nA | ||
| VGS(th) | Gate Threshold Voltage (VDS=VGS, ID=-250μA) | -1 | -1.5 | -2.2 | V |
| RDS(on) | Drain-Source On-State Resistance (VGS=-10V, ID=-15A) | 6.5 | 8 | mΩ | |
| RDS(on) | Drain-Source On-State Resistance (VGS=-4.5V, ID=-10A) | 10 | 13 | mΩ | |
| CISS | Input Capacitance (VDS=-15V, VGS=0V, f=1MHz) | 2690 | pF | ||
| COSS | Output Capacitance (VDS=-15V, VGS=0V, f=1MHz) | 495 | pF | ||
| CRSS | Reverse Transfer Capacitance (VDS=-15V, VGS=0V, f=1MHz) | 360 | pF | ||
| Qg | Total Gate Charge (VDD=-15V, ID=-20A, VGS=-10V) | 45 | nC | ||
| Qgs | Gate Source Charge (VDD=-15V, ID=-20A, VGS=-10V) | 6.2 | nC | ||
| Qgd | Gate Drain Charge (VDD=-15V, ID=-20A, VGS=-10V) | 13.5 | nC | ||
| td(on) | Turn-on Delay Time (VDD=-15V, ID=-20A, VGS=-10V, RG=3Ω) | 11 | nS | ||
| tr | Turn-on Rise Time (VDD=-15V, ID=-20A, VGS=-10V, RG=3Ω) | 9.5 | nS | ||
| td(off) | Turn-Off Delay Time (VDD=-15V, ID=-20A, VGS=-10V, RG=3Ω) | 24 | nS | ||
| tf | Turn-Off Fall Time (VDD=-15V, ID=-20A, VGS=-10V, RG=3Ω) | 12 | nS | ||
| VSD | Forward on voltage (Tj=25°C, Is=-28A) | -1.2 | V | ||
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina