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Durable P Channel MOSFET Slkor SL4485 Featuring Ultra Low Rds on and High Power Dissipation Capacity

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The SL4485 is a P-Channel MOSFET designed for high-density applications requiring ultra-low Rds(on). It features a fully characterized avalanche voltage and current, and an excellent package for efficient heat dissipation. This MOSFET is suitable for PWM applications, power management, and load switching.

Product Attributes

  • Brand: SLKormicro
  • Model: SL4485
  • Package: SOP-8

Technical Specifications

ParameterConditionMinTypMaxUnit
Absolute Maximum Ratings
VDSDrain-Source Voltage-40V
VGSGate-Source Voltage±20V
TJMaximum Junction Temperature150°C
TSTGStorage Temperature Range-55150°C
IDTested Continuous Drain Current@GS=10V, Tc=25°C-10A
IDMPulse Drain Current, Tc=25°C-45A
ISDiode Continuous Forward Current, Tc=25°C-10A
PDMaximum Power Dissipation, Mounted on Large Heat Sink3.2W
RθJAThermal Resistance Junction-to-Ambient40°C/W
Electrical Characteristics (TJ=25°C unless otherwise noted)
BV(BR)DSSDrain-Source Breakdown Voltage, VGS=0V, ID=-250μA-40V
IDSSZero Gate Voltage Drain Current, VDS=-40V, VGS=0V-1μA
IGSSGate-Body Leakage Current, VGS=±20V, VDS=0V±100nA
VGS(th)Gate Threshold Voltage, VDS=VGS, ID=-250μA-1.0-1.8-2.5V
RDS(on)Drain-Source On-State Resistance, VGS=-10V, ID=-12A1115
Drain-Source On-State Resistance, VGS=-4.5V, ID=-10A1620
CapacitanceInput Capacitance (CISS), VDS=-20V, VGS=0V, f=1MHz2980pF
Output Capacitance (COSS), VDS=-20V, VGS=0V, f=1MHz380pF
Reverse Transfer Capacitance (CRSS), VDS=-20V, VGS=0V, f=1MHz300pF
Switching Characteristics @ TJ = 25°C (unless otherwise stated)
Gate ChargeTotal Gate Charge (Qg), VDS=-20V, ID=-12A, VGS=-10V75nC
Gate Source Charge (Qgs), VDS=-20V, ID=-12A, VGS=-10V14nC
Gate Drain Charge (Qgd), VDS=-20V, ID=-12A, VGS=-10V15nC
Delay TimesTurn-on Delay Time (td(on)), VDD=-12V, ID=-1A, VGS=-10V, RG=3.3Ω10nS
Turn-off Delay Time (td(off)), VDD=-12V, ID=-1A, VGS=-10V, RG=3.3Ω38nS
Rise/Fall TimesTurn-on Rise Time (tr), VDD=-12V, ID=-1A, VGS=-10V, RG=3.3Ω17nS
Turn-off Fall Time (tf), VDD=-12V, ID=-1A, VGS=-10V, RG=3.3Ω25nS
Source-Drain Diode Characteristics
VSDForward On Voltage, Tj=25°C, Is=-20A-1.2V

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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