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Durable P Channel MOSFET Slkor FDN338P designed for power management and video monitor applications

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The FDN338P is a P-Channel MOSFET featuring leading trench technology for low on-resistance (RDS(on)) and low gate charge. It is designed for applications such as video monitors and power management.

Product Attributes

  • Brand: slkormicro
  • Model: FDN338P
  • Package: SOT-23

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Drain-Source Breakdown VoltageBV(BR)DSSVGS=0VID=-250A-20----V
Zero Gate Voltage Drain CurrentIDSSVDS=-16VVGS=0V-----1uA
Gate-Body Leakage CurrentIGSSVGS=8VVDS=0V----100nA
Gate Threshold VoltageVGS(th)VDS=VGSID=-250A-0.4-0.7-1.5V
Drain-Source On-State ResistanceRDS(on)VGS=-4.5VID=-1.6A--75115m
Drain-Source On-State ResistanceRDS(on)VGS=-2.5VID=-1.3A--105155m
Input CapacitanceCISSVDS=-10VID=-2A VGS=-4.5V--327--pF
Output CapacitanceCOSSVDD=-10VID=-1A VGS=-4.5VRG=2.8--60--pF
Reverse Transfer CapacitanceCRSSf=1MHz--55--pF
Total Gate ChargeQg--3.8--nC
Gate Source ChargeQgs--0.7--nC
Gate Drain ChargeQgd--0.9--nC
Turn-on Delay Timetd(on)--6--nS
Turn-on Rise Timetr--31--nS
Turn-Off Delay Timetd(off)--45--nS
Turn-Off Fall Timetf--40--nS
Forward on voltageVSDTj=25Is=-1.6A-----1.2V
Diode Continuous Forward CurrentISTc=25C-----1.6A
Pulse Drain CurrentIDMTc=25C-----5.0A
Tested Continuous Drain CurrentIDTc=25C-----1.6A
Maximum Power DissipationPDTA=25----0.5W
Thermal Resistance Junction-to-AmbientRJAMounted on Large Heat Sink--250--C/W
Maximum Junction TemperatureTJ--150--C
Storage Temperature RangeTSTG-55--150C
Gate-Source VoltageVGS----8V

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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