N Channel Power MOSFET Slkor SL2312 with 20V Drain Source Voltage and 5A Current Handling Capability

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

The SL2312 is an N-Channel Power MOSFET designed for high power and current handling capabilities. It features a VDS of 20V and an ID of 5A, with low on-state resistance (RDS(ON)

Product Attributes

Brand: SLKOR Micro
Product Type: N-Channel Power MOSFET
Package: SOT-23
Certifications: Lead free product is acquired

Technical Specifications

Characteristic	Symbol	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	BVDSS	20			V
Gate Threshold Voltage	VGS(th)	0.45		1.2	V
Diode Forward Voltage Drop	VSD			1.5	V
Zero Gate Voltage Drain Current (VGS=0V, VDS=16V)	IDSS			1	uA
Zero Gate Voltage Drain Current (VGS=0V, VDS=16V, TA=55)	IDSS			10	uA
Gate Body Leakage	IGSS			+100	nA
Static Drain-Source On-State Resistance (ID=5A, VGS=4.5V)	RDS(ON)		23	25	m
Static Drain-Source On-State Resistance (ID=2A, VGS=2.5V)	RDS(ON)		32	35	m
Static Drain-Source On-State Resistance (ID=1A, VGS=1.8V)	RDS(ON)		45	50	m
Input Capacitance	CISS		650		pF
Output Capacitance	COSS		120		pF
Turn-ON Time	t(on)		20		ns
Turn-OFF Time	t(off)		60		ns

Maximum Ratings

Characteristic	Symbol	Max	Unit
Drain-Source Voltage	BVDSS	20	V
Gate-Source Voltage	VGS	+8	V
Drain Current (continuous)	ID	5	A
Drain Current (pulsed)	IDM	18	A
Total Device Dissipation (TA=25)	PD	1250	mW
Junction Temperature	TJ	150
Storage Temperature	Tstg	-55to+150

SOT-23 Package Information

Symbol	MIN.	MAX.	Unit
A	0.900	1.150
A1	0.000	0.100
A2	0.900	1.050
b	0.300	0.500
c	0.080	0.150
D	2.800	3.000
E	1.200	1.400
E1	2.250	2.550
e	0.950	TYP
e1	1.800	2.000
L	0.550	REF
L1	0.300	0.500
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