High power gain silicon epitaxial transistor Slkor BFU580Q designed for CATV video amplifiers and remote controls
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The BFU580Q is an NPN silicon epitaxial transistor designed for high-performance microwave and high-frequency applications. Manufactured using silicon epitaxial technology, it offers high power gain, wide bandwidth, low noise, low leakage current, and small junction capacitance. Its larger dynamic range and excellent current linearity make it ideal for medium-power, high-frequency signal amplification. Key applications include CATV video amplifiers, wireless transceiver modules, long-range remote controls, security alarms, and analog/digital cordless phones.
Product Attributes
- Brand: SLKOR
- Model: BFU580Q
- Marking: S58
- Package Type: SOT89
- Material: Silicon Epitaxial
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tamb=25) | ||||||
| Collector-Base Voltage | VCBO | 25 | V | |||
| Collector-Emitter Voltage | VCEO | 12 | V | |||
| Emitter-Base Voltage | VEBO | 3 | V | |||
| Collector Current | ICM | 100 | mA | |||
| Power Dissipation | PT | 1000 | mW | |||
| Max Junction Temperature | TJ | -40 | 150 | |||
| Storage Temperature | Tstg | -65 | 150 | |||
| Electrical Characteristics (Tamb=25) | ||||||
| Collector-Base Breakdown Voltage | BVCBO | open emitter | 25 | V | ||
| Collector-Emitter Breakdown Voltage | BVCEO | open base | 12 | V | ||
| Emitter-Base Breakdown Voltage | BVEBO | open collector | 3 | V | ||
| Collector Current | IC | 100 | mA | |||
| Collector Cutoff Current | ICBO | VCB=6V, IE=0 | 0.05 | A | ||
| DC Current Gain | hFE | VCE=8V, IC=30mA | 60 | 95 | 130 | |
| Characteristic Frequency | fT | VCE=8V, IC=30mA, f=900MHz | 10.0 | 10.5 | - | GHz |
| Feedback Capacitance | Cre | IC=iC=0, VCB=8V, f=1MHz | 1.2 | - | pF | |
| Collector Capacitance | CC | IE=ie=0, VCB=8V, f=1MHz | 1.8 | - | pF | |
| Emitter Capacitance | Ce | IC=iC=0, VEB=0.5V, f=1MHz | 3.0 | - | pF | |
| Insertion Power Gain | |S21| | IC=30mA, VCE=8V, f=433MHz | 18.0 | 18.5 | - | dB |
| Insertion Power Gain | |S21| | IC=30mA, VCE=8V, f=900MHz | 13.5 | 14 | - | dB |
| Insertion Power Gain | |S21| | IC=30mA, VCE=8V, f=1800MHz | 8.0 | 8.5 | - | dB |
| Max Unilateral Power Gain | GUM | IC=30mA, VCE=8V, f=433MHz | 19.5 | 20 | - | dB |
| Max Unilateral Power Gain | GUM | IC=30mA, VCE=8V, f=900MHz | 13.5 | 14 | - | dB |
| Max Unilateral Power Gain | GUM | IC=30mA, VCE=8V, f=1.8GHz | 8.0 | 8.5 | - | dB |
| Package Dimensions (Units:mm) | ||||||
| Length | 4.2 | 0.05 | mm | |||
| Width | 4.6 | 0.1 | mm | |||
| Height | 1.6 | 0.15 | mm | |||
| Pitch (Pin 1 to Pin 3) | 2.5 | 0.2 | mm | |||
| Pin Width | 0.45 | 0.1 | mm | |||
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina