High cell density trench technology P Channel MOSFET Slkor IRF9540 with excellent thermal performance

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Product Description

Product Overview

This P-Channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(on) with low gate charge, making it suitable for a wide range of applications. Key features include high cell density trench technology for ultra-low RDS(ON), excellent package for good heat dissipation, and availability as a green device.

Product Attributes

Brand: slkormicro
Model: IRF9540
Technology: Advanced Trench Technology
Certifications: Green device available

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Units
Absolute Maximum Ratings (TC=25 unless otherwise noted)
VDS	Drain-Source Voltage				-100	V
VGS	Gate-Source Voltage				±20	V
ID	Continuous Drain Current-TC=25				-20	A
ID	Continuous Drain Current-TC=100				-14	A
IDM	Pulsed Drain Current¹				-85	A
PD	Total Power Dissipation				58	W
EAS	Single Pulsed Avalanche Energy				177	mJ
TJ, TSTG	Operating and Storage Junction Temperature Range		-55		+150
Thermal Characteristics (TC=25 unless otherwise noted)
RJC	Thermal Resistance, Junction to Case			2.15		/W
RJA	Thermal Resistance Junction-Ambient			62		/W
Electrical Characteristics (TC=25 unless otherwise noted)
Off Characteristics
BVDSS	Drain-Sourtce Breakdown Voltage	VGS=0V,ID=-250A	-100			V
IDSS	Zero Gate Voltage Drain Current	VGS=0V, VDS=-100V			-50	μA
IGSS	Gate-Source Leakage Current	VGS=±20V, VDS=0A			±100	nA
On Characteristics
VGS(th)	GATE-Source Threshold Voltage	VGS=VDS, ID=-250μA	-1.2	-1.7	-2.5	V
RDS(ON)	Static Drain-Source On-Resistance	VGS=-10V,ID=-10A		78	90	mΩ
RDS(ON)	Static Drain-Source On-Resistance	VGS=-4.5V,ID=-8A		86	110	mΩ
Dynamic Characteristics
Ciss	Input Capacitance	VDS=-20V, VGS=0V, f=1MHz		3020		pF
Coss	Output Capacitance			120		pF
Crss	Reverse Transfer Capacitance			73		pF
Switching Characteristics
td(on)	Turn-On Delay Time^2,3	VDD=-50V, ID=-10A, VGS=-10V, RG=3.3Ω		11		ns
tr	Rise Time^2,3			27		ns
td(off)	Turn-Off Delay Time^2,3			78		ns
tf	Fall Time^2,3			53		ns
Qg	Total Gate Charge^2,3	VGS=-10V, VDS=-50V, ID=-20A		44		nC
Qgs	Gate-Source Charge^2,3			9		nC
Qgd	Gate-Drain “Miller” Charge^2,3			5.5		nC
Drain-Source Diode Characteristics
VSD	Drain Diode Forward Voltage²	VGS=0V,IS=-1A			-1.2	V
IS	Continuous Source Current^1,5	VG=VD=0V , Force Current			-20	A
Trr	Reverse Recovery Time	IF=-8A , di/dt=-100A/µs , TJ=25℃		38.7		nS
Qrr	Reverse Recovery Charge			22.4		nC