Trench Power LV MOSFET Slkor SL2102 N Channel Transistor Designed for Load Switching and PWM Control
Price:
Negotiable
MOQ:
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Delivery Time:
Negotiable
Product Description
Product Overview
The SL2102 is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers high power and current handling capabilities, making it suitable for PWM applications and load switching.
Product Attributes
- Brand: SLKormicro (implied by URL)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Product Summary | ||||||
| Drain-source Voltage | VDS | 20 | V | |||
| Drain Current | ID | 2.0 | A | |||
| RDS(ON) | RDS(ON) | at VGS=4.5V | 68 | mohm | ||
| RDS(ON) | RDS(ON) | at VGS=2.5V | 115 | mohm | ||
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | TA=25 | 20 | V | ||
| Gate-source Voltage | VGS | TA=25 | ±10 | V | ||
| Drain Current | ID | TA=25 | 2.0 | A | ||
| Pulsed Drain Current | IDM | TA=25 | 14 | A | ||
| Total Power Dissipation | PD | TA=25 | 0.7 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | Steady State | 178 | / W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V,TC=25 | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±10V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250μA | 0.45 | 0.75 | 1.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=2.0A | 50 | 68 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 2.5V, ID=1.5A | 65 | 115 | mΩ | |
| Diode Forward Voltage | VSD | IS=2.0A,VGS=0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 2.0 | A | |||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHZ | 280 | pF | ||
| Output Capacitance | Coss | VDS=10V,VGS=0V,f=1MHZ | 46 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V,f=1MHZ | 29 | pF | ||
| Total Gate Charge | Qg | VGS=4.5V,VDS=10V,ID=4.3A | 2.9 | nC | ||
| Gate Source Charge | Qgs | VGS=4.5V,VDS=10V,ID=4.3A | 0.4 | |||
| Gate Drain Charge | Qg | VGS=4.5V,VDS=10V,ID=4.3A | 0.6 | |||
| Turn-on Delay Time | tD(on) | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 13 | ns | ||
| Turn-on Rise Time | tr | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 54 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 18 | ns | ||
| Turn-off Fall Time | tf | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 11 | ns | ||
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Sellina