100V 12A N Channel MOSFET Slkor SL12N10 Designed for High Density Cell Power Management Solutions
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Product Description
100V/12A N-Channel MOSFET
This 100V/12A N-Channel MOSFET features a super high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. It is designed for power management applications in notebooks, DC/DC converters, load switches, and LCD display inverters.
Product Attributes
- Device Code: 12N10
- Package: TO-252
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VGS=0VID=250A | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | VDS=100VVGS=0V | -- | -- | 1.0 | uA |
| Gate-Body Leakage Current | VGS=20VVDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VDS=VGSID=250A | 1.0 | 2 | 3 | V |
| Drain-Source On-State Resistance | VGS=10V ID=10A | -- | 130 | 160 | m |
| VGS=4.5VID=5A | -- | 140 | 180 | m | |
| Input Capacitance | VDS=50VVGS=0V f=1MHz | -- | 650 | -- | pF |
| Output Capacitance | VDS=50VVGS=0V f=1MHz | -- | 25 | -- | pF |
| Reverse Transfer Capacitance | VDS=50VVGS=0V f=1MHz | -- | 20 | -- | pF |
| Total Gate Charge | VDD=50VRL=19 VGS=10VRG=3 | -- | 20 | -- | nC |
| Gate Source Charge | VDD=50VRL=19 VGS=10VRG=3 | -- | 2 | -- | nC |
| Gate Drain Charge | VDD=50VRL=19 VGS=10VRG=3 | -- | 3 | -- | nC |
| Turn-on Delay Time | VDD=50VRL=19 VGS=10VRG=3 | -- | 6 | -- | nS |
| Turn-on Rise Time | VDD=50VRL=19 VGS=10VRG=3 | -- | 4 | -- | nS |
| Turn-Off Delay Time | VDD=50VRL=19 VGS=10VRG=3 | -- | 20 | -- | nS |
| Turn-Off Fall Time | VDD=50VRL=19 VGS=10VRG=3 | -- | 4 | -- | nS |
| Forward on voltage | Tj=25Is=3A | -- | -- | 1.2 | V |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina