Power MOSFET Slkor 2SK3018 N Channel Type Featuring SOT 23 Package for Circuit Electronics

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Product Description

Product Overview

The 2SK3018 is an N-Channel Power MOSFET designed for various electronic applications. It offers specific electrical characteristics and thermal properties suitable for power management and switching circuits.

Product Attributes

Brand: slkormicro
Model: 2SK3018
Package: SOT-23

Technical Specifications

Characteristic	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source Breakdown Voltage	BVDSS	30			V	(ID =10uA,VGS=0V)
Gate Threshold Voltage	VGS(th)	0.8		2	V	(ID =100uA,VGS= VDS)
Drain-Source On Voltage	VDS(ON)			0.375	V	(ID=50mA,VGS=5V)
Drain-Source On Voltage	VDS(ON)			3.75	V	(ID =400mA,VGS=10V)
Diode Forward Voltage Drop	VSD			1.5	V	(ISD=200mA,VGS=0V)
Zero Gate Voltage Drain Current	IDSS			1	uA	(VGS=0V, VDS= BVDSS)
Zero Gate Voltage Drain Current	IDSS			500	uA	(VGS=0V, VDS=0.8BVDSS, TA=125)
Gate Body Leakage	IGSS			+100	nA	(VGS=+20V, VDS=0V)
Static Drain-Source On-State Resistance	RDS(ON)			8		(ID=50mA,VGS=4.5V)
Static Drain-Source On-State Resistance	RDS(ON)			7.5		(ID=400mA,VGS=10V)
Input Capacitance	CISS			50	pF	(VGS=0V, VDS=25V,f=1MHz)
Common Source Output Capacitance	COSS			25	pF	(VGS=0V, VDS=25V,f=1MHz)
Turn-ON Time	t(on)			20	ns	(VDS=30V, ID=200mA, RGEN=25)
Turn-OFF Time	t(off)			40	ns	(VDS=30V, ID=200mA, RGEN=25)
Reverse Recovery Time	trr		400		ns	(ISD=800mA, VGS=0V)
Drain-Source Voltage (Max)	BVDSS			30	V
Gate-Source Voltage (Max)	VGS			+20	V
Drain Current (continuous)	IDR			100	mA
Drain Current (pulsed)	IDRM			400	mA
Total Device Dissipation	PD		200		mW	TA=25
Derate above 25	PD		1.8		mW/
Thermal Resistance Junction to Ambient	RJA		417		/W
Junction and Storage Temperature	TJ,Tstg	-55		150