Low Gate Threshold Voltage N Channel MOSFET Slkor 2N7002KM with Fast Switching and Low Capacitance

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Product Description

Product Overview

The 2N7002KM is an N-Channel Enhancement MOSFET designed for general-purpose applications. It features low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds, making it suitable for various electronic circuits. The device is ESD protected up to 2KV HBM.

Product Attributes

Brand: SLKOR
Model: 2N7002KM
Package: SOT-723
Certifications: ESD Protected 2KV HBM

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	VDSS	ID=100A, VGS=0V	60			V
Zero Gate Voltage Drain Current	IDSS	VDS=60V, VGS=0V		1	A
Gate-Body Leakage Current	IGSS	VDS=0V, VGS=20V		10	uA
Gate Threshold Voltage	VGS(th)	VDS = 10V, ID = 1mA		1	2.5	V
Static Drain-Source On-Resistance	RDS(On)	VGS=10V, ID=500mA		2
Static Drain-Source On-Resistance	RDS(On)	VGS=10V, ID=50mA		3
Forward Transfer Admittance	\|Yfs\|	VGS=10V, ID=200mA		80	mS
Input Capacitance	Ciss	VGS=0V, VDS=25V, f=1MHz		50	pF
Output Capacitance	Coss	VDS = 10V, ID = 1mA		25	pF
Reverse Transfer Capacitance	Crss			5	pF
Total Gate Charge	Qg	VGS=4.5V, VDS=15V, ID=200mA		0.8	nC
Turn-On Delay Time	td(on)	ID=200mA, VDS=30V, RG=10,VGEN=10V,RL=150		20	ns
Turn-Off Delay Time	td(off)	ID=200mA, VDS=30V, RG=10,VGEN=10V,RL=150		40	ns
Drain Current -Continuous	ID			300	mA
Drain Current -Pulsed	ID			800	mA
Power Dissipation	PD	Device mounted on FR-4 PCB		350	mW
Thermal Resistance.Junction- to-Ambient	RthJA			357	C/W
Junction Temperature	TJ				150	C
Junction and Storage Temperature Range	Tstg		-55		150	C