Slkor FDN302P P Channel MOSFET Featuring High Speed Switching and Low RDS ON for Load Switching Needs

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Product Description

Product Overview

The FDN302P is a P-Channel MOSFET featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It offers high-speed switching and is suitable for applications such as battery protection, load switching, and power management.

Product Attributes

Brand: slkormicro
Model: FDN302P
Package: SOT-23

Technical Specifications

Parameter	Condition	Min	Typ	Max	Unit
Absolute Maximum Ratings
VDS				-20	V
VGS			±12		V
TJ				150	°C
TSTG		-50		155	°C
ID	Tc=25°C			-2.4	A
IDM	Tc=25°C			-10	A
IS	Tc=25°C			-2.4	A
PD			0.5		W
RθJA	Mounted on Large Heat Sink		250		°C/W
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
BV(BR)DSS	VGS=0V, ID=-250μA	-20			V
IDSS	VDS=-16V, VGS=0V			-1	uA
IGSS	VGS=±12V, VDS=0V			±100	nA
VGS(th)	VDS=VGS, ID=-250μA	-0.6	-1.0	-1.5	V
RDS(on)	VGS=-4.5V, ID=-2.4A		44	55	mΩ
RDS(on)	VGS=-2.5V, ID=-2.0A		64	80	mΩ
VSD	Tj=25±C, Is=-2.4A		-0.85	-1.2	V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
CISS	VDS=-15V, VGS=0V, f=1MHz		780		pF
COSS	VDS=-15V, VGS=0V, f=1MHz		75		pF
CRSS	VDS=-15V, VGS=0V, f=1MHz		40		pF
Qg	VDS=-15V, ID=-4.2A, VGS=-10V		16		nC
Qgs	VDS=-15V, ID=-4.2A, VGS=-10V		2		nC
Qgd	VDS=-15V, ID=-4.2A, VGS=-10V		1.9		nC
td(on)	VDS=-15V, ID=-1A, VGS=-10V, RG=3Ω		7		nS
tr	VDS=-15V, ID=-1A, VGS=-10V, RG=3Ω		3		nS
td(off)	VDS=-15V, ID=-1A, VGS=-10V, RG=3Ω		27		nS
tf	VDS=-15V, ID=-1A, VGS=-10V, RG=3Ω		12		nS