100V NPN Silicon Planar Medium Power Transistor Slkor SL493TA Designed for General Purpose Applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SL493TA is a 100V NPN Silicon Planar Medium Power Transistor designed for general-purpose applications. It features a high continuous current capability of 1A and a low saturation voltage of VCE(sat) < 300mV at 500mA, making it suitable for applications requiring efficient power handling. The device offers a breakdown voltage of BVCEO > 100V.

Product Attributes

Brand: SLKormicro
Model: SL493TA
Type: NPN Silicon Planar Medium Power Transistor

Technical Specifications

Parameter	Symbol	Rating	Unit
Absolute Maximum Ratings (Ta = 25C)
Collector-Base Voltage	VCBO	120	V
Collector-Emitter Voltage	VCEO	100	V
Emitter-Base Voltage	VEBO	5	V
Continuous Collector Current	IC	1	mA
Peak Pulse Current	ICM	2	A
Base Current	IB	200	mA
Power Dissipation at Tamb=25C	Ptot	1	W
Operating and Storage Temperature Range	Tj:Tstg	-65 to 150
Electrical Characteristics (Ta = 25C)
Breakdown Voltages V(BR)CBO	IC=100A	120	V
Breakdown Voltages VCEO(sus)	IC=10mA*	100	V
Breakdown Voltages V(BR)EBO	IE=100A	5	V
Collector Cut-Off Currents ICBO	VCB=100V	100	nA
Collector Cut-Off Currents ICES	VCES=100V	100	nA
Emitter Cut-Off Current IEBO	VEB=4V	100	nA
Base-Emitter Saturation Voltage VBE(sat)	IC=500mA, IB=50mA	0.3	V
Base-Emitter Saturation Voltage VBE(sat)	IC=1A, IB=100mA	0.6	V
Base-Emitter Saturation Voltage VBE(sat)	IC=1A, IB=100mA	1.15	V
Base-Emitter Turn On Voltage VBE(on)	IC=1A, VCE=10V	1.0	V
Static Forward Current Transfer Ratio hFE	IC=1mA, VCE=10V*	100
	IC=250mA, VCE=10V*	100	300
	IC=500mA, VCE=10V*	60
	IC=1A, VCE=10V*	20
Transition Frequency fT	IC=50mA, VCE=10V, f=100MHz	150	MHz
Collector-Base Breakdown Voltage Cobo	VCB=10V, f=1MHz	10	pF